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首页> 外文期刊>Physica status solidi, B. Basic research >The self-compression of injected electron-hole plasma in silicon
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The self-compression of injected electron-hole plasma in silicon

机译：硅中注入的电子空穴等离子体的自压缩

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A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature T greater than or equal to 300 K. ne internal quantum efficiency of the luminescence, equal to (1-3) X 10(-3), appears to be unexpectedly high. The spectral position of the luminescence line indicates that a weak overheating of the diode by the diode current results in an anomalously strong reduction of the semiconductor energy gap inside the electron-hole plasma. A unique threshold optical hysteresis is observed in the luminescence intensity with changing diode current. These results are explained by condensation of the injected electron-hole plasma into a dense state. A reduction of the semiconductor energy gap due to generation of phonons by the plasma is discussed as a reason of the plasma condensation. The plasma condensation is identified as the plasma self-compression. [References: 27]
机译：研究了在温度T大于或等于300 K时在隧穿硅MOS二极管的电致发光光谱中观察到的电子-空穴等离子体的复合辐射线。发光的内部量子效率等于（1-3） X 10（-3）似乎异常高。发光线的光谱位置表明，二极管电流对二极管的弱过热导致电子空穴等离子体内部的半导体能隙异常强烈地减小。随着二极管电流的变化，在发光强度中观察到了独特的阈值光学迟滞。通过将注入的电子-空穴等离子体凝结成致密状态来解释这些结果。作为等离子体凝结的原因，讨论了由于等离子体产生声子而导致的半导体能隙的减小。血浆凝结被确定为血浆自压缩。 [参考：27]

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