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首页> 外文期刊>Physica status solidi, B. Basic research >Vibrational absorption of hydrogen bonded to interstitial oxygen in GaAs and GaP
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Vibrational absorption of hydrogen bonded to interstitial oxygen in GaAs and GaP

机译：GaAs和GaP中与间隙氧结合的氢的振动吸收

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In LEC-grown GaAs and Gap with an oxygen content larger than 10(15) cm(-3), two sharp vibrational absorption lines are investigated located at 3108.0 as well as 3235.0 cm(-1) for GaAs and 3106.0 as well as 3250.9 cm(-1) for GaP. These lines are due to the stretching modes of hydrogen bonded to interstitial oxygen in two different centres (O-i-H)(1) and (O-i-H)(II) as proved by the detection of the isotopically shifted lines in material doped additionally with deuterium. Centre (O-i-H)(I) is a single hydrogen atom bonded to oxygen and is in GaAs photosensitive at temperatures lower than 100 K. (O-i-H)(II) is a di-hydrogen centre with the two hydrogen atoms being on equivalent positions around O. [References: 18]
机译：在LEC生长的GaAs和Gap中，氧含量大于10（15）cm（-3），研究了两条尖锐的振动吸收线，分别位于3108.0，GaAs和3235.0 cm（-1），3106.0和3250.9 GaP为cm（-1）。这些线是由于氢在两个不同的中心（O-i-H）（1）和（O-i-H）（II）中键合到间隙氧上的拉伸模式所致，这通过在掺有氘的材料中检测到同位素位移线来证明。中心（OiH）（I）是与氧键合的单个氢原子，在温度低于100 K的GaAs中呈光敏性。（OiH）（II）是双氢中心，两个氢原子位于O周围的等价位置[参考：18]

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