首页> 外文期刊>Physica status solidi, B. Basic research >E-beam longitudinally pumped laser based on ZnCdSe/ZnSe MQW structure grown by MBE on ZnSe(001) substrate
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E-beam longitudinally pumped laser based on ZnCdSe/ZnSe MQW structure grown by MBE on ZnSe(001) substrate

机译:MBE在ZnSe(001)衬底上生长的基于ZnCdSe / ZnSe MQW结构的电子束纵向泵浦激光器

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摘要

Electron beam longitudinally pumped laser based on 15 ZnCdSe/ZnSe QW periodic-gain structure grown by molecular beam epitaxy on ZnSe(001) substrate was studied. An output power of 0.3 W was achieved. The laser wavelength was in 518-536 rim range, being at the short wavelength side of the QW emission line at low excitation level. Such unusual feature was explained by the participation of excited QW levels in the creation of the optical gain. [References: 9]
机译:研究了分子束外延在ZnSe(001)衬底上生长的基于15 ZnCdSe / ZnSe QW周期增益结构的电子束纵向泵浦激光器。实现了0.3 W的输出功率。激光波长在518-536边缘范围内,处于低激发水平的QW发射线的短波长侧。激发的QW电平参与光增益的产生可以解释这种不寻常的特征。 [参考:9]

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