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首页> 外文期刊>Physica status solidi, B. Basic research >Modification of the magnetic and electronic properties of ordered arrays of (II, Mn)VI quantum wires due to reduced lateral dimensions
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Modification of the magnetic and electronic properties of ordered arrays of (II, Mn)VI quantum wires due to reduced lateral dimensions

机译：由于减小的横向尺寸，对（II，Mn）VI量子线有序阵列的磁性和电子性质的修改

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摘要

We present a novel way of synthesising highly ordered arrays of Cd1-xMnxS and Cd1-xMnxSe quantum wires with lateral dimensions of 3 nm separated by 2 nm SiO2 barriers by incorporating the (II, Mn)VI semiconductor with 0 less than or equal to x less than or equal to 1 into the pore system of mesoporous MCM-41 SiO2 matrices. The electronic and excitonic properties were studied using photoluminescence and photoluminescence excitation spectroscopy at low temperatures and in magnetic fields up to 7.5 T. Due to the quantum confinement of the excitons in the wires an increase of the direct band gap by about 200 meV for (Cd, Mn)S and by about 350 meV for (Cd, Mn)Se is observed. In addition, we observe a much stronger, p-d hybridisation related band gap bowing as a function of Mn-concentration in the wires compared to bulk. This effect is related to the increase of the band gap due to the quantum confinement which shifts the p-like valence band edge closer to the Mn-3d-related states in the valence band. Surprisingly, the s,p-d exchange induced giant Zeeman splitting of the excitons in the (Cd,Mn)Se wires compared to those in bulk material appears to be very small. The magnetic properties of the samples were studied by SQUID and electron paramagnetic resonance measurements in the temperature range from 2 to 300 K. Compared to the bulk (II, Mn)VI compounds, a reduced antiferromagnetic coupling between the magnetic moments of the Mn2+ ions is found. For x > 0.8, a suppression of the paramagnetic to antiferromagnetic phase transition of the Mn-system is observed because the lateral dimensions of the wires are smaller than the magnetic length scale of the antiferromagnetic ordering. [References: 10]
机译：我们提出了一种新颖的方法，通过结合（II，Mn）VI半导体（0小于或等于x）来合成高阶Cd1-xMnxS和Cd1-xMnxSe量子线阵列，其横向尺寸为3 nm，被2 nm SiO2势垒隔开小于或等于1的介孔MCM-41 SiO2基质的孔系统。在低温和高达7.5 T的磁场中，使用光致发光和光致发光激发光谱技术研究了电子和激子性质。由于导线中激子的量子限制，（Cd）的直接带隙增加了约200 meV。 ，观察到约350meV的（Cd，Mn）Se。此外，我们观察到与散装相比，p-d杂化相关的带隙弯曲更强，这是金属丝中Mn浓度的函数。该效应与由于量子限制引起的带隙的增加有关，量子限制将p价价带边缘移近价带中与Mn-3d相关的态。令人惊讶的是，与散装材料中的相比，（Cd，Mn）Se线中的s，p-d交换引起激子的巨大塞曼分裂。在2至300 K的温度范围内，通过SQUID和电子顺磁共振测量研究了样品的磁性。与块状（II，Mn）VI化合物相比，Mn2 +离子的磁矩之间的反铁磁耦合减小。找到了。当x> 0.8时，由于线的横向尺寸小于反铁磁​​有序的磁性长度尺度，因此可以观察到Mn系统的顺磁到反铁磁相变的抑制。 [参考：10]

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