Microscopic analysis of high quality thick ZnOCVD layers: Imaging of growth domains, strain relaxation, and impurity incorporation

Riemann T.; Christen J.; Kaczmarczyk G.; Kaschner A.; Hoffmann A.; Zeuner A.; Hofmann D.; Meyer BK.

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Microscopic analysis of high quality thick ZnOCVD layers: Imaging of growth domains, strain relaxation, and impurity incorporation

机译：高质量厚ZnOCVD层的微观分析：生长域，应变松弛和杂质掺入的成像

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We report on spatially-resolved low-temperature luminescence and Raman experiments on ZnO epilayers grown on GaN templates by vapor phase deposition. Our investigations reveal that the peak luminescence position of the free and bound exciton lines of ZnO depends on the distance from the substrate. Different acceptor and donor species become locally dominant. Furthermore, a strong red shift occurs directly at the interface, indicating strong local internal electric fields. From Raman experiments we determined the spatial evolution of the compressive strain in the ZnO epilayer and the induced tensile strain in the GaN templates. [References: 5]

机译：我们报告了通过气相沉积在GaN模板上生长的ZnO外延层的空间分辨低温发光和拉曼实验。我们的研究表明，ZnO的自由键合激子线的峰值发光位置取决于与衬底的距离。不同的受体和供体物种成为局部优势。此外，强烈的红移直接发生在界面上，表明强烈的局部内部电场。通过拉曼实验，我们确定了ZnO外延层中压缩应变和GaN模板中诱导的拉伸应变的空间演化。 [参考：5]

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《Physica status solidi, B. Basic research》 |2002年第2期|共5页
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Riemann T.; Christen J.; Kaczmarczyk G.; Kaschner A.; Hoffmann A.; Zeuner A.; Hofmann D.; Meyer BK.;
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1. Microscopic analysis of high quality thick ZnOCVD layers: Imaging of growth domains, strain relaxation, and impurity incorporation [J] . Riemann T., Christen J., Kaczmarczyk G., Physica status solidi, B. Basic research . 2002,第2期

机译：高质量厚ZnOCVD层的微观分析：生长域，应变松弛和杂质掺入的成像
2. High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics [J] . Valdueza-Felip S., Bellet-Amalric E., Nunez-Cascajero A., Journal of Applied Physics . 2014,第23期

机译：通过等离子体辅助分子束外延合成的高In含量的InGaN层：生长条件，应变松弛和结合动力学
3. High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics [J] . S. Valdueza-Felip, E. Bellet-Amalric, A. Nunez-Cascajero, Journal of Applied Physics . 2014,第23期

机译：通过等离子体辅助分子束外延合成的高In含量的InGaN层：生长条件，应变松弛和结合动力学
4. Atomic-Scale Analysis of Ductile Void Growth and Nanocrystalline Domain Formation as Strain Relaxation Mechanisms in Ultra-Thin Metallic Films [C] . M. Rauf Gungor, Dimitrios Maroudas International Symposium on Runaway Reactions, Pressure Relief Design and Effluent Handling American Institute of Chemical Engineers/American Chemical Society Management Conference . 2005

机译：延性空隙生长和纳米晶结构域形成的原子尺度分析，作为超薄金属膜中应变松弛机制
5. Strain relaxation in nm-thick Cu and Cu-alloy films bonded to a rigid substrate. [D] . Herrmann, Ashley Ann Elizabeth. 2016

机译：纳米厚的铜和铜合金薄膜与刚性基板结合时的应变松弛。
6. Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes [O] . Jie Zhao, Hongpo Hu, Yu Lei, 2019

机译：蓝宝石衬底上具有纳米尺度厚AlN成核层的高质量无裂纹AlN薄膜的异质外延生长用于基于AlGaN的深紫外发光二极管
7. Microscopic Analysis of High Quality Thick ZnO CVD Layers: Imaging of Growth Domains, Strain Relaxation, and Impurity Incorporation [O] . T. Riemann, J. Christen, G. Kaczmarczyk, 2002

机译：高品质厚ZnO CVD层的显微镜分析：生长域，应变松弛和杂质掺入的成像
8. Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers [R] . Welser, R. E., Guido, L. J. 1994

机译：晶格失配的3-5个半导体外延层的成核，生长和应变弛豫

Microscopic analysis of high quality thick ZnOCVD layers: Imaging of growth domains, strain relaxation, and impurity incorporation

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