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Epitaxial growth of strained nanocrystals

机译：应变纳米晶体的外延生长

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The growth of strained nanocrystals producing self-assembled quantum dots (QDs) and wires (QWRs) has produced convincing examples of low-dimensional behavior. Moreover, the growth of InAs on GaAs (001) in particular has been shown to produce not only interesting examples of fundamental science but also of technologically relevant applications, mainly in the area of laser research. It is then of utmost importance the investigation of the growth processes in strained epitaxy, involving both thermodynamic and kinetic pathways to the production of such systems. Here the focus is on the thermodynamic aspects of nanocrystal growth, choosing as a model system the epitaxial growth of Ge:Si (001). This is an interesting system to build the knowledge of nanocrystal growth, giving the reduced number of experimental parameters one has. With the lessons learned from this system, InAs:GaAs (001) QDs were grown near thermal equilibrium, generating a reproducible and uniform ensemble of nanocrystals. In a different regime, the growth of self-organized rare-earth silicide wires can be achieved upon proper choice of growth temperature and growth rate. These few examples show that the subtleties of strained nanocrystal growth can be explored in such a way that by knowing the thermodynamics and kinetics of a particular material system many interesting low-dimensional structures can be created. [References: 35]
机译：产生自组装量子点（QD）和导线（QWR）的应变纳米晶体的生长产生了令人信服的低维行为实例。此外，已经证明InAs在GaAs（001）上的生长不仅产生了基础科学的有趣实例，而且还产生了与技术相关的应用程序，主要是在激光研究领域。因此，最重要的是研究应变外延中的生长过程，其中涉及生产此类系统的热力学和动力学途径。这里的重点是纳米晶体生长的热力学方面，选择Ge：Si（001）的外延生长作为模型系统。这是一个有趣的系统，可用于建立纳米晶体的生长知识，从而减少实验参数的数量。从该系统中吸取的教训使InAs：GaAs（001）量子点在热平衡附近生长，生成了可重复且均匀的纳米晶体集合体。在不同的情况下，可以通过适当选择生长温度和生长速率来实现自组织稀土硅化物线材的生长。这几个例子表明，可以通过以下方式探索应变纳米晶体生长的微妙之处：通过了解特定材料系统的热力学和动力学，可以创建许多有趣的低维结构。 [参考：35]

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