Hole states in p-type delta-doped ZnSe quantum wells

Gaggero-Sager LM.; Mora-Ramos ME.

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Hole states in p-type delta-doped ZnSe quantum wells

机译：p型δ掺杂的ZnSe量子阱中的空穴态

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The study of valence band states in single p-type delta-doped quantum wells in ZnSe is performed using the Thomas-Fermi-Dirac approximation as framework for presenting an analytical expression for the Hartree-Fock potential. The results for the interband transition obtained in the calculation are compared with experimental values of photoluminescence showing E-c - E-v energy differences. In spite of the very scarce experimental information about these kinds of systems, it is possible to predict a very good agreement when this exchange-including simple model is applied. [References: 17]

机译：使用Thomas-Fermi-Dirac逼近作为框架来研究Hartree-Fock势的解析表达式，对ZnSe中单个p型δ掺杂量子阱中的价带态进行了研究。将计算中获得的带间跃迁结果与显示E-c-E-v能量差的光致发光实验值进行比较。尽管关于这类系统的实验信息非常稀少，但当应用此交换（包括简单模型）时，可以预测出很好的一致性。 [参考：17]

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《Physica status solidi, B. Basic research》 |2002年第1期|共4页
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Gaggero-Sager LM.; Mora-Ramos ME.;
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正文语种 eng
中图分类固体物理学;
关键词
Molecular-beam epitaxy; Si; Superlattices; Transport; Contacts; Nitrogen; Energy;

机译：分子束外延;硅;超晶格;运输;接触;氮;能量;

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1. Hole states in p-type delta-doped ZnSe quantum wells [J] . Gaggero-Sager LM., Mora-Ramos ME. Physica status solidi, B. Basic research . 2002,第1期

机译：p型δ掺杂的ZnSe量子阱中的空穴态
2. Thomas-Fermi-Dirac theory of the hole gas of a double p-type delta-doped GaAs quantum wells [J] . Rodriguez-Vargas I., Gaggero-Sager LM., Velasco VR. Surface Science . 2003,第1a3期

机译：双重p型δ掺杂GaAs量子阱的空穴气体的Thomas-Fermi-Dirac理论
3. Exchange energy of a hole gas and the Thomas-Fermi-Dirac approximation in p-type delta-doped quantum wells in Si and GaAs [J] . Gaggero-Sager LM. Physica status solidi, B. Basic research . 2002,第1期

机译：Si和GaAs中p型δ掺杂量子阱中空穴气体的交换能量和Thomas-Fermi-Dirac近似
4. Optical gain and lasing of trions in delta-doped ZnSe quantum wells [C] . J. Puls, G. V. Mikhailov, F. Henneberger, International Symposium on Nanostructures: Physics and Technology . 2003

机译：三角洲掺杂ZnSe量子井中的光学增益和分散
5. Novel layered semiconductor quantum structures in new material systems --- III-nitride quantum cascade emitters and detectors, light emission in Fe:ZnSe with quantum cascade laser pumping, theoretical methods with real-time Green's functions, and hyperbolic metamaterials. [D] . Song, Yu. 2014

机译：新材料系统中的新型分层半导体量子结构---氮化物量子级联发射器和检测器，具有量子级联激光泵浦的Fe：ZnSe发光，具有实时格林函数的理论方法以及双曲线超材料。
6. Long spin-flip time and large Zeeman splitting of holes in type-II ZnTe/ZnSe submonolayer quantum dots [O] . H. Ji, S. Dhomkar, R. Wu, -1

机译：II型ZnTe / ZnSe亚单层量子点中的长自旋翻转时间和大的Zeeman裂隙
7. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier [O] . Ji, Y., Zhang, Z.-H., Tan, S.T., 2013

机译：具有p型掺杂量子势垒的InGaN / GaN多量子阱发光二极管中的空穴传输增强

Hole states in p-type delta-doped ZnSe quantum wells

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