Small built-in electric fields in quaternary InAlGaN heterostructures

Teisseyre H.; Suski T.; Lepkowski SP.; Anceau S.; Perlin P.; Lefebvre P. Konczewicz L.; Hirayama H.; Aoyagi Y.

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Small built-in electric fields in quaternary InAlGaN heterostructures

机译：四元InAlGaN异质结构中的小型内置电场

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A study of light emission of InAlGaN based multi quantum wells (with different well widths) has been performed by means of hydrostatic pressure and time resolved measurements. Both techniques are very sensitive to the presence of the large internal electric fields in hexagonal InGaN/GaN and GaN/AlGaN heterostructures. In the present studies. we found that independently of the quantum well width the pressure shift of the light emission energy and the photoluminescence decay time show almost constant values. This observation is interpreted as an evidence of the lack of built-in electric field in the used quaternary quantum wells. [References: 8]

机译：已经通过静水压力和时间分辨测量对基于InAlGaN的多量子阱（具有不同的阱宽度）的发光进行了研究。两种技术都对六角形InGaN / GaN和GaN / AlGaN异质结构中大的内部电场的存在非常敏感。在目前的研究中。我们发现，与量子阱宽度无关，发光能量的压力位移和光致发光衰减时间显示出几乎恒定的值。该观察结果被解释为所用四元量子阱中缺乏内置电场的证据。 [参考：8]

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《Physica status solidi, B. Basic research》 |2002年第3期|共5页
作者
Teisseyre H.; Suski T.; Lepkowski SP.; Anceau S.; Perlin P.; Lefebvre P. Konczewicz L.; Hirayama H.; Aoyagi Y.;
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正文语种 eng
中图分类固体物理学;
关键词
Piezoelectric field; Pressure behavior; Quantum-wells;

机译：压电电场;压力行为;量子阱;

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1. 锰磷硒/二硫化钨异质结在外加电场下电子结构性质及催化性能的可控性研究 [J] . 方丽梅, 曾迎, EKHOLM Marcus, 中南大学学报（英文版） . 2021,第012期
2. Small built-in electric fields in quaternary InAlGaN heterostructures [J] . Teisseyre H., Suski T., Lepkowski SP., Physica status solidi, B. Basic research . 2002,第3期

机译：四元InAlGaN异质结构中的小型内置电场
3. Band gaps and built-in electric fields in InAlN/GaN short period superlattices: Comparison with (InAlGa)N quaternary alloys [J] . I. Gorczyca, T. Suski, N. E. Christensen, Physical review . 2016,第16期

机译：InAlN / GaN短周期超晶格中的带隙和内置电场：与（InAlGa）N四元合金的比较
4. Band gaps and built-in electric fields in InAlN/GaN short period superlattices: Comparison with (InAlGa)N quaternary alloys [J] . Gorczyca I., Suski T., Christensen N. E., Physical review, B . 2016,第16期

机译：InAlN / GaN短时超晶格中的带隙和内置电场：与（InAlGa）N四元合金的比较
5. SMALL INTERNAL ELECTRIC FIELDS IN QUATERNARY InAlGaN HETEROSTRUCTURES [C] . S. ANCEAU, S. P. LEPKOWSKI, H. TEISSEYRE, NATO Advanced Research Workshop on UV Solid-State Light Emitters and Detectors . 2004

机译：季度少年中的小型电场异质结构
6. Electric Control of Magnetization in Biferroic Heterostructures with Patterned Interfaces: A Phase-Field Micromagnetic Study [D] . Alvandi-Tabrizi, Youness. 2018

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7. Interfacial Built-In Electric Field-Driven Direct Current Generator Based on Dynamic Silicon Homojunction [O] . Yanghua Lu, Qiuyue Gao, Xutao Yu, 2020

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8. Hot Carrier Transfer in graphene/PtSe2 Heterostructure Tuned by Built-in Electric Field [O] . Qiushi Ma, Wenjie Zhang, Chunwei Wang, 2021

机译：石墨烯/ Ptse2异质结构中的热载体转移通过内置电场调节
9. Role of Built-in Electric Fields on the Ignition of Oxide Coated NanoAluminum: Ion Mobility versus Fickian Diffusion [R] . Henz, B. J., Hawa, T., Zachariah, M. R. 2010

机译：内置电场在氧化物涂层纳米铝点火中的作用：离子迁移率与Fickian扩散

Small built-in electric fields in quaternary InAlGaN heterostructures

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