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Photo-induced degradation in strained ZnSe

机译:应变ZnSe中的光诱导降解

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Photo-induced degradation phenomena in strained ZnSe were investigated. (111) ZnSe substrates were bi-axially strained due to film deposition, and their cleaved (110) planes were exposed to a focused He-Cd laser for several thousands of seconds at room temperature. Although photolumincscence intensities decreased with the irradiation for all samples, the decreasing rates depended on the strains. Compressed regions degraded faster than diluted regions. No-strained regions de- graded slower than the others. Conventional ZnSe based lasers have an active layer with compressive strains. Our results show that the laser with a diluted or no-strained active layer possibly survives longer. [References: 12]
机译:研究了应变ZnSe中的光诱导降解现象。 (111)ZnSe衬底由于薄膜沉积而被双轴拉伸,其劈开的(110)平面在室温下暴露于聚焦的He-Cd激光器数千秒钟。尽管所有样品的光致发光强度随照射而降低,但降低速率取决于菌株。压缩区域的降解速度比稀释区域快。无应变区域的降级速度比其他区域慢。常规的基于ZnSe的激光器具有带有压缩应变的有源层。我们的结果表明,具有稀释或未应变的活性层的激光器可能会存活更长的时间。 [参考:12]

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