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首页> 外文期刊>Physica status solidi, B. Basic research >Spin lifetime measurements in MBE-grown GaAs epilayers
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Spin lifetime measurements in MBE-grown GaAs epilayers

机译：MBE生长的GaAs外延层中的自旋寿命测量

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Electron spin relaxation times in excess of the localized limit have been measured in MBE n-GaAs layers, with the times depending on the doping concentration. We have optically oriented the electrons in the samples, and measured spin lifetimes via luminescence depolarization in a transverse magnetic field (Hanle effect). The lifetimes thus obtained were 14 and 26 ns for samples nominally doped at 1 X 10(15) and 3 X 10(15) cm(-3), respectively. The dominant dephasing mechanism, which is the hyperfine interaction of localized electrons with lattice nuclei, is discussed. Our results are presented in the context of our larger goal, which is to use resonance techniques for spin measurements and control. In this context, the Hanle spin lifetime measurement is a necessary step to be followed by optically detected magnetic resonance in a longitudinal magnetic field. [References: 17]
机译：在MBE n-GaAs层中已测量出超过局部极限的电子自旋弛豫时间，该时间取决于掺杂浓度。我们对样品中的电子进行了光学定向，并通过横向磁场中的发光去极化（Hanle效应）测量了自旋寿命。这样获得的寿命分别为标称掺杂为1 X 10（15）和3 X 10（15）cm（-3）的样品的14 ns和26 ns。讨论了主要的移相机制，即局部电子与晶格核的超精细相互作用。我们的结果是在我们更大的目标下提出的，那就是将共振技术用于自旋测量和控制。在这种情况下，汉勒自旋寿命的测量是在纵向磁场中进行光学检测的磁共振之后的必要步骤。 [参考：17]

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