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Magnetotunneling in GaAs/AlxGa1-xAs double barrier heterostructures with and without on-center-well impurity planes

机译:GaAs / AlxGa1-xAs双势垒异质结构中带或不带中心阱杂质平面的磁隧道效应

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By means of the diagrammatic techniques for nonequilibrium processes proposed by Kcldysh and adopting a simple one-band tight-binding Hamiltonian, we study the resonant tunneling in GaAs/AlxGa1-x As double-barrier heterostructures (DBH) in the presence of a magnetic field applied parallel to the current direction in this work. We have found that the number of Landau levels that contribute to the resonant tunneling diminishes with the magnetic field. all centered around the position of the resonance. Also, we have calculated the conductance versus bias voltage and we have found that the maxima and minima of the conductance move towards higher bias with the magnetic field in good agreement with experimental reports. We have considered tile effects of isoelectronic impurity-planes localized at the well region on the J-V characteristics of tile system and on the conductance versus voltage. The presence of the impurity-plane induces a Shift to higher (lower) energies of the density of states. of the J-V characteristic curves and of the conductance versus voltage, corresponding to a repulsive (attractive) potential. [References: 24]
机译:借助Kcldysh提出的非平衡过程的图解技术,并采用简单的单频带紧密结合哈密顿量,我们研究了在磁场存在下GaAs / AlxGa1-x As双势垒异质结构(DBH)中的共振隧穿在这项工作中平行于当前方向应用。我们已经发现,有助于共振隧穿的朗道能级的数量随磁场而减小。全部围绕共振的位置。此外,我们已经计算出电导率与偏置电压的关系,并且发现电导率的最大值和最小值随着磁场的变化而朝着更高的偏置方向移动,这与实验报告非常吻合。我们已经考虑了位于阱区的等电子杂质平面的平铺效应对平铺系统的J-V特性以及电导与电压的关系。杂质平面的存在引起向态密度的更高(更低)能量的转变。的J-V特性曲线以及电导率与电压的关系曲线,对应于排斥(吸引)电位。 [参考:24]

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