Difference in luminescence properties between Sm doped ZnS and Eu doped ZnS

Abiko Y.; Nakayama N.; Akimoto K.; Yao T.

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Difference in luminescence properties between Sm doped ZnS and Eu doped ZnS

机译：Sm掺杂的ZnS和Eu掺杂的ZnS的发光特性差异

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A sharp luminescence peak from Sin doped ZnS at 650 nm which can be assigned as (4)G(5/2)-H-6(9/2) transition of Sm3+ ion was observed; however, no luminescence peak related to Eu3+, which can have luminescence in the similar spectral region, was observed from Eu doped ZnS. A defect level situated at about 0.36 eV above the valence band was detected only in Sm doped ZnS by infrared absorption spectroscopy, The cause of the difference in the luminescence properties between Sm doped ZnS and Eu doped ZnS was reasonably explained by the model of defect related energy transfer associated with the 0.36 eV level. [References: 9]

机译：观察到在650 nm处来自Sin掺杂的ZnS的尖锐发光峰，可以认为是Sm3 +离子的（4）G（5/2）-H-6（9/2）跃迁。然而，从掺Eu的ZnS中未观察到与Eu3 +有关的发光峰，该峰可能在相似的光谱区域内发光。通过红外吸收光谱法仅在掺Sm的ZnS中检测到位于价带上方约0.36 eV的缺陷水平，并通过缺陷相关模型合理地解释了掺Sm的ZnS和Eu掺杂的ZnS发光性质差异的原因。与0.36 eV水平相关的能量转移。 [参考：9]

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《Physica status solidi, B. Basic research》 |2002年第1期|共4页
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Abiko Y.; Nakayama N.; Akimoto K.; Yao T.;
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1. Difference in luminescence properties between Sm doped ZnS and Eu doped ZnS [J] . Abiko Y., Nakayama N., Akimoto K., Physica status solidi, B. Basic research . 2002,第1期

机译：Sm掺杂的ZnS和Eu掺杂的ZnS的发光特性差异
2. Synthesis and photoluminescence properties of a phase pure green-emitting Eu doped JEM sialon (LaSi6-zAl1+zN10-zOz, z similar to 1) phosphor with a large red-shift of emission and unusual thermal quenching behavior [J] . Wang Chun-Yun, Takeda Takashi, ten Kate Otmar Melvin, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2016,第43期

机译：具有发射红移大且异常热猝灭行为的相纯绿色发射Eu掺杂的JEM赛隆（LaSi6-zAl1 + zN10-zOz，z类似于1）的磷光体的合成和光致发光特性
3. A series of Eu3+ doped Zn[B3O3(OH)(5)]center dot H2O/ZnB4O7/ZnB2O4 phosphors: Facile preparation and photoluminescence properties [J] . Qiao Li-Jun, Wang Xia, Liu Zhi-Hong Materials Research Bulletin . 2015,第octa期

机译：一系列Eu3 +掺杂的Zn [B3O3（OH）（5）]中心点H2O / ZnB4O7 / ZnB2O4荧光粉：简便的制备和光致发光性能
4. The Effect in the Production and Luminescence Property of Zn3V2O5 with Eu-doping and the First Principle Calculation of α-Zn3V2O8 [C] . Jiaolian Luo, Ruxue Chen, Xiaoming Zhang International Conference on Frontiers of Materials Synthesis and Processing . 2018

机译：Zn3V2O5的效果与欧盟掺杂的效果和发光性能及α-ZN3V2O8的第一个原理计算
5. Photoluminescence and Electrical Properties of Impurity-doped ZnSe Layers Grown by Molecular Beam Epitaxy利用統計を見る [D] . Ohkawa Kazuhiro 1992

机译：分子束外延生长掺杂杂质的ZnSe层的光致发光和电学性质
6. Shell Thickness Dependence of Interparticle Energy Transfer in Core-Shell ZnSe/ZnSe Quantum Dots Doping with Europium [O] . Ni Liu, Shuxin Li, Caifeng Wang, 2018

机译：Core掺杂壳核ZnSe / ZnSe量子点中粒子间能量转移的壳厚度依赖性
7. The Effect in the Production and Luminescence Property of Zn3V2O8 with Eu-doping and the First Principle Calculation of α- Zn3V2O8 [O] . Jiaolian Luo, Ruxue Chen, Xiaoming Zhang 2017

机译：Zn3V2O8的效果与欧盟掺杂和α-Zn3V2O8的第一原理计算的效果

Difference in luminescence properties between Sm doped ZnS and Eu doped ZnS

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