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Observation of biexciton emission in ZnO/ZnMgO multi-quantum wells

机译:ZnO / ZnMgO多量子阱中双激子发射的观察

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We report on the experimental observation of the radiative recombination of localized biexcitons at low temperature (5 K) in ZnO/ZnMgO multi-quantum wells grown by laser-molecular-beam epitaxy on a lattice-matched ScAlMgO4 substrate (0001). The emission components due to the recombinations of localized excitons and biexcitons and due to the exciton-exciton scattering were verified by examining their relative energy positions and intensity dependence on excitation power density. The excitation threshold for biexciton emission was significantly lower than that for exciton-exciton scattering. The binding energy of biexcitons in multi-quantum wells is largely enhanced compared with the corresponding value of bulk ZnO. [References: 14]
机译:我们报告了在晶格匹配的ScAlMgO4衬底(0001)上通过激光分子束外延生长的ZnO / ZnMgO多量子阱中低温(5 K)下局部双激子辐射重组的实验观察。通过检查它们的相对能量位置和强度与激发功率密度的关系,验证了由于局部激子和双激子复合以及激子-激子散射引起的发射分量。双激子发射的激发阈值明显低于激子-激子散射的激发阈值。与相应的块状ZnO值相比,双激子在多量子阱中的结合能大大提高。 [参考:14]

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