Calculation of reflectance anisotropy for semiconductor surface exploration

Schmidt WG

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Calculation of reflectance anisotropy for semiconductor surface exploration

机译：半导体表面探测的反射率各向异性的计算

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Reflectance anisotropy spectroscopy (RAS) is exquisitely sensitive to probe surfaces, with many potential applications in determining surface geometries or monitoring material growth. Thanks to recent computational and methodological progress it has now become possible to calculate surface optical spectra accurately and with true predictive power. Here I review briefly the simulation of RAS spectra and discuss recent methodological advances, which allow for the modelling of self-energy, excitonic and local-field effects in large and complex systems. Numerical results for semiconductor surfaces in comparison to measured data are used to illustrate the potential and limits of the different levels of theory. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

机译：反射各向异性光谱（RAS）对探针表面非常敏感，在确定表面几何形状或监视材料生长方面具有许多潜在的应用。得益于最近的计算和方法学进展，现在已经可以精确地并具有真正的预测能力来计算表面光谱。在这里，我简要回顾一下RAS光谱的仿真，并讨论了最新的方法学进展，这些进展为大型和复杂系统中的自能量，激子和局部场效应建模提供了可能。与测量数据相比，半导体表面的数值结果用于说明不同理论水平的潜力和局限性。（c）2005 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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《Physica status solidi, B. Basic research》 |2005年第13期|共14页
作者
Schmidt WG;
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正文语种 eng
中图分类固体物理学;
关键词
AB-INITIO CALCULATION; BULK-RELATED FEATURES; OPTICAL-PROPERTIES; 1ST-PRINCIPLES CALCULATIONS; DIELECTRIC-CONSTANT; CRYSTAL-SURFACES; STATE SIGNATURES; X-1) SURFACE; SPECTRA; SPECTROSCOPY;

机译：从头计算;与批量相关的功能;光学特性;第一原理计算;介电常数;晶体表面;状态信号;X-1）表面;光谱;光谱学;

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专利

1. Calculation of reflectance anisotropy for semiconductor surface exploration [J] . Schmidt WG Physica status solidi, B. Basic research . 2005,第13期

机译：半导体表面探测的反射率各向异性的计算
2. Effects of the local field and inherent deformation in reflectance anisotropy spectra of A~(III)B~V semiconductor surfaces [J] . V. L. Berkovits, A. B. Gordeeva, V. A. Kosobukin Physica status solidi, B. Basic research . 2010,第8期

机译：局部场和固有形变对A〜（III）B〜V半导体表面反射各向异性谱的影响
3. Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces [Review] [J] . Sobiesierski Z., Matthai CC., Westwood DI. Journal of Physics. Condensed Matter . 1998,第1期

机译：半导体表面反射各向异性光谱学的各个方面[综述]
4. Origin of optical anisotropy in reflectance anisotropy spectroscopy of semiconductor surfaces [C] . R. A. Vazquez-Nava, N. Arzate, B. S. Mendoza Symposium Optics in Industry . 2006

机译：半导体表面反射率各向异性光谱的光学各向异性的起源
5. Tracking daily land surface albedo and reflectance anisotropy with moderate-resolution imaging spectroradiometer (MODIS). [D] . Shuai, Yanmin. 2010

机译：使用中等分辨率成像光谱仪（MODIS）跟踪每日陆地表面反照率和反射率各向异性。
6. Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS) [O] . Guilherme Sombrio, Emerson Oliveira, Johannes Strassner, 2021

机译：掺杂或量子点层作为使用反射各向异性光谱（RAS）的III / V半导体反应离子蚀刻（RIE）的原位蚀刻静止指示器
7. Prediction of Fundamental Properties of Semiconductors and Materials Exploration Using First-Principles Calculations [O] . Fumiyasu Oba, Yoyo Hinuma, Yu Kumagai 2017

机译：使用初始原理计算预测半导体和材料勘探的基本特性
8. Approach for the Long-Term 30-m Land Surface Snow-Free Albedo Retrieval from Historic Landsat Surface Reflectance and MODIS-based A Priori Anisotropy Knowledge. [R] . Shuai, Y., Masek, J. G., Gao, F., 2014

机译：从历史Landsat地表反射和基于mODIs的先验各向异性知识进行长期30 m地表无雪反照率反演。

Calculation of reflectance anisotropy for semiconductor surface exploration

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