Superradiant dissipative tunneling in a double p-i-n semiconductor heterostructure with thermal injection of electrons

Stefanescu E; Scheid W

首页> 外文期刊>Physica, A. Statistical mechanics and its applications >Superradiant dissipative tunneling in a double p-i-n semiconductor heterostructure with thermal injection of electrons

【24h】

Superradiant dissipative tunneling in a double p-i-n semiconductor heterostructure with thermal injection of electrons

机译：电子热注入双p-i-n半导体异质结构中的超辐射耗散隧穿

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We propose a semiconductor device with two p-i-n junctions maintained at two different temperatures. When the current injected in the device due to this temperature difference exceeds a threshold value, a superradiant field is created in the first gate that induces an additional current in the second gate. The injection current is amplified by this reaction loop. In this way, the heat flow between the two junctions is partially transformed in superradiant power. (c) 2006 Elsevier B.V. All rights reserved.

著录项

来源
《Physica, A. Statistical mechanics and its applications》 |2007年第1期|共8页
作者
Stefanescu E; Scheid W;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类分子物理学、原子物理学;
关键词
dissipation; master equation; fermions; superradiance; p-i-n structure; quantum dot; FERMI SYSTEM; SUPER-RADIANCE; FIELD; CAVITY; SUPERFLUORESCENCE; DYNAMICS; GAP;

机译：耗散;主方程;费米子;超辐射;p-i-n结构;量子点;费米系统;超辐射;场;腔;超荧光;动力学;间隙;

相似文献

外文文献
中文文献
专利

1. Superradiant dissipative tunneling in a double p-i-n semiconductor heterostructure with thermal injection of electrons [J] . Stefanescu E, Scheid W Physica, A. Statistical mechanics and its applications . 2007,第1期

机译：电子热注入双p-i-n半导体异质结构中的超辐射耗散隧穿
2. Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope [J] . Masalov S.A., Kalinina K.V., Evtikhiev V.P., Physics of the solid state . 2012,第6期

机译：使用超高真空隧道显微镜将低能电子场注入ZnSe / CdSe / ZnSe异质结构
3. Electrical Spin Injection in a Ferromagnetic Metal/Insulator/Semiconductor Tunnel Heterostructure [J] . V. F. Motsnyi, V. I. Safarov, P. van Dorpe, Journal of Superconductivity . 2003,第4期

机译：铁磁性金属/绝缘体/半导体隧道异质结构中的电自旋注入
4. TRANSMISSION COEFFICIENTS FOR TUNNELING OF ELECTRONS AND HOLES IN BIASED Ga{sub}(1-x)Al{sub}xAs-GaAs-Ga{sub}(1-x)Al{sub}xAs TRIPLE BARRIERS SEMICONDUCTOR HETEROSTRUCTURES [C] . A. M. Elabsy, H. G. Abdelwahed Multifunctional Nanocomposites Nanomaterials Conference . 2008

机译：偏置Ga {sub}（1-x）xAs-gaas-ga {sub}（1-x）xAs}（1-x）xAs}（1-x）xAs}（1-x）xAs三屏幕半导体异质结构的电子和孔的隧道隧穿的透射系数
5. Ballistic transport of hot electrons and intervalley resonant tunneling in semiconductor quantum well heterostructure devices. [D] . Carnahan, Robert Earl. 1994

机译：半导体量子阱异质结构器件中热电子的弹道传输和音程共振隧穿。
6. Pulse generation with ultra-superluminal pulse propagation in semiconductor heterostructures by superradiant-phase transition enhanced by transient coherent population gratings [O] . Peter P Vasilev, Richard V Penty, Ian H White 2016

机译：瞬态相干种群光栅增强的超辐射相变在半导体异质结构中产生超超发光脉冲传播的脉冲
7. Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure [O] . Motsnyi, V.F., Boeck, de, J., Das, J., 2002

机译：铁磁体/隧道势垒/半导体异质结构中的电自旋注入

Superradiant dissipative tunneling in a double p-i-n semiconductor heterostructure with thermal injection of electrons

摘要

著录项

相似文献

相关主题

期刊订阅