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首页> 外文期刊>Physica, B. Condensed Matter >Suppression of electron-hole-pair recombination in edge states in quantum Hall regimes
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Suppression of electron-hole-pair recombination in edge states in quantum Hall regimes

机译：量子霍尔体系中边缘态电子-空穴对复合的抑制

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Far-infrared (FIR) photoconductivity induced by cyclotron resonance in edge slates of quantum Hall devices are studied by carrying out time-resolved measurements. It is found that the recombination of electron-hole pairs excited via cyclotron resonance in edge states is significantly suppressed, yielding a surprisingly long recombination lifetime ( similar to 10 ms). This is in marked contrast to much shorter recombination lifetimes ( similar to 1 ms) in bulk states. The experimental results lead us to suggest that the edge-state FIR photoconductivity is induced by an effect of electric polarization. This implies also that edge states can be a promising candidate for application as a FIR detector. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 22]
机译：通过进行时间分辨测量，研究了回旋共振在量子霍尔器件边缘板中感应的远红外（FIR）光电导性。发现通过回旋共振在边缘状态激发的电子-空穴对的重组被显着抑制，产生了惊人长的重组寿命（类似于10 ms）。这与本体状态下的重组寿命短得多（类似于1 ms）形成鲜明对比。实验结果使我们认为，边缘状态FIR光电导性是由极化作用引起的。这也意味着边缘状态可以作为FIR检测器的应用前景广阔。 （C）2001 Elsevier Science B.V.保留所有权利。 [参考：22]

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