An X-ray diffraction study of direct-bonded silicon interfaces: A model semiconductor grain boundary

Howes PB.; Grey F.; Feidenhansl R.; Nielsen M.; Rasmussen FB. Baker J.; Benamara M.

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An X-ray diffraction study of direct-bonded silicon interfaces: A model semiconductor grain boundary

机译：直接键合硅界面的X射线衍射研究：半导体晶粒边界模型

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Semiconductor wafer bonding techniques have been used to create a giant twist grain boundary from two Si(001) wafers. We show, using X-ray diffraction measurements that after annealing the interface forms a highly ordered superstructure with relaxations extending to many layers into the crystals on either side of the interface. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 12]

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《Physica, B. Condensed Matter》 |1998年第4期|共5页
作者
Howes PB.; Grey F.; Feidenhansl R.; Nielsen M.; Rasmussen FB. Baker J.; Benamara M.;
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正文语种 eng
中图分类物理学;
关键词
X-ray diffraction; Semiconductors; Twist grain boundaries;

机译：X射线衍射;半导体;扭曲晶界;

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1. An X-ray diffraction study of direct-bonded silicon interfaces: A model semiconductor grain boundary [J] . Howes PB., Grey F., Feidenhansl R., Physica, B. Condensed Matter . 1998,第1a4期

机译：直接键合硅界面的X射线衍射研究：半导体晶粒边界模型
2. Synchrotron X-ray Laue diffraction study of hydrogen-induced blisters on iron grain boundaries [J] . Tao Xuan, Lv Guo-Cai, Kou Jiawei, Scripta materialia . 2019,第期

机译：同步X射线Laue Laue衍射研究对铁晶界氢诱导的水疱
3. X-ray Diffraction Studies on Grain Size of Nanocrystalline Diamond and Residual Stress on Silicon Substrate Prepared by Hot-Filament Chemical Vapor Deposition [J] . Ong-On Topon, Vittaya Amornkitbamrung, Thanusit Burinprakhon New Diamond and Frontier Carbon Technology . 2007,第5期

机译：热丝化学气相沉积法制备纳米晶金刚石的X射线衍射研究及硅衬底上的残余应力
4. A Model of Coupled Diffusion of IMpurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries [C] . O. I. Velichko, A. K. Fedotov Proceedings of the 7th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology October 5-10, 1997 Spa, Belgium . 1997

机译：杂质原子和点缺陷在半导体界面和晶界附近的耦合扩散模型
5. Interaction of Charge Carriers with Defects at Interfaces and Grain Boundaries in Compound Semiconductors [D] . Chikhalkar, Abhinav. 2021

机译：电荷载流子与复合半导体界面缺陷的相互作用
6. Urease and hexadecylamine-urease films at the air-water interface: an x-ray reflection and grazing incidence x-ray diffraction study. [O] . D Gidalevitz, Z Huang, S A Rice 1999

机译：空气-水界面处的脲酶和十六烷基脲脲酶薄膜：X射线反射和掠入射X射线衍射研究。
7. Silicon Σ13 501 grain boundary interface structure determined by bicrystal Bragg rod x-ray scattering [O] . Howes, Paul Bedford, Rhead, S., Roy, Mervyn, 2013

机译：双晶布拉格棒x射线散射确定的硅Σ13501晶界界面结构
8. Electron Diffraction and Microscopy Studies of the Structure of Grain Boundaries in Silicon. MSC Report No. 4151 [R] . Carter, C. B., Foell, H., Ast, D. G., 1980

机译：硅中晶界结构的电子衍射和显微镜研究。 msC第4151号报告

An X-ray diffraction study of direct-bonded silicon interfaces: A model semiconductor grain boundary

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