Nonlinear transport properties of samples with inner current contacts in quantum Hall regime

Takamasu T.; Kido G.; Endo A.; Kato M.; Katsumoto S.; Iye Y.; Oikawa Y.

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Nonlinear transport properties of samples with inner current contacts in quantum Hall regime

机译：具有内部电流接触的量子霍尔态样品的非线性输运性质

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We have performed transport: measurements in the quantum Hall regime using Hall-bar sample with inner current contact. In the plateau of the integer quantum Hall effect, we found a region where voltage drop along the channel V-x is negative. Considering the suppression of scattering between inner and outer edge states at low temperature, this negative voltage can be explained as a result of non-equilibrium distribution of electrons injected from the inner current contact. In addition, drastic frequency dependence of the negative resistance was found at very low frequency. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 8]

机译：我们已经进行了传输：使用带有内部电流接触的霍尔棒样品在量子霍尔体系中进行测量。在整数量子霍尔效应的平台上，我们发现了一个区域，其中沿沟道V-x的电压降为负。考虑到在低温下抑制内部和外部边缘状态之间的散射，可以将此负电压解释为从内部电流触点注入的电子的不平衡分布的结果。另外，在非常低的频率下发现负电阻的频率依赖性很大。（C）1998 Elsevier Science B.V.保留所有权利。 [参考：8]

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《Physica, B. Condensed Matter》 |1998年第0期|共4页
作者
Takamasu T.; Kido G.; Endo A.; Kato M.; Katsumoto S.; Iye Y.; Oikawa Y.;
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正文语种 eng
中图分类物理学;
关键词
Quantum hall effect; Edge state; Gaas/algaas heterostructure; Edge-state;

机译：量子霍尔效应;边沿状态;Gaas / Algaas异质结构;边沿状态;

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专利

1. Nonlinear transport properties of samples with inner current contacts in quantum Hall regime [J] . Takamasu T., Kido G., Endo A., Physica, B. Condensed Matter . 1998,第0期

机译：具有内部电流接触的量子霍尔态样品的非线性输运性质
2. Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum Hall regime [J] . Ahmad Nurul Fariha, Iwasaki Takuya, Komatsu Katsuyoshi, Applied Physics Letters . 2019,第2期

机译：间隙宽度对量子霍尔体系中hBN /石墨烯/ hBN中量子点接触的电子输运的影响
3. Inter and intra Landau level scatterings as a mechanism for the onset of the voltage drop across the contact at high currents in the quantum Hall effect regime [J] . Christophe Chaubet, Yahya Moubarak Meziani, Benoit Jouault, Semiconductor science and technology . 2003,第11期

机译：在量子霍尔效应机制中，兰道之间和内部的朗道能级散射是高电流下接触两端电压降开始的一种机制
4. Many-body effects in quantum rings: From the Aharonov-Bohm transport to the quantum Hall regime [C] . E. Rasanen International Conference on the Physics of Semiconductors . 2011

机译：Quantum Rings的许多身体效果：从Aharonov-Bohm运输到量子霍尔制度
5. Quantum transport in electron Fabry-Perot interferometers in quantum Hall regime. [D] . Lin, Ping. 2010

机译：电子法布里-珀罗干涉仪中的量子霍尔态中的量子传输。
6. Fabry–Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts [O] . Nurul Fariha Ahmad, Katsuyoshi Komatsu, Takuya Iwasaki, -1

机译：弹道石墨烯量子点接触中的法布里-珀罗共振和量子霍尔态的交叉
7. Current Carrying Edge Channels and the Role of Contacts in the Quantum Hall Regime [O] . Müller G., Weiss Dieter, Koch S., 1990

机译：当前的载流子通道和接触在量子霍尔体制中的作用

Nonlinear transport properties of samples with inner current contacts in quantum Hall regime

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