Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime

Indlekofer KM.; Forster A.; Luth H.

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Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime

机译：单电子隧穿条件下具有可变横向约束的量子点系统的密度矩阵描述

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We consider a quantum dot system with variable confinement, realized by a vertical GaAs transistor with a lateral Schottky gate and an embedded asymmetrical AlGaAs/GaAs double barrier structure. The observed staircase current-voltage characteristics in the sub-Kelvin regime reflect the influence of the gate on the electronic structure. Many-body density-matrix simulations with a parabolic depletion model for the lateral gate are employed to interpret the experiments. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 10]

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《Physica, B. Condensed Matter》 |2002年第4期|共4页
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Indlekofer KM.; Forster A.; Luth H.;
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正文语种 eng
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1. Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime [J] . Indlekofer KM., Forster A., Luth H. Physica, B. Condensed Matter . 2002,第1a4期

机译：单电子隧穿条件下具有可变横向约束的量子点系统的密度矩阵描述
2. Quantum dots in the strong confinement regime: a model system for gain in quasi zero-dimensional semiconductors [J] . H. Giessen, U. Woggon, B. Fluegel G. Mohs, Chemical Physics: A Journal Devoted to Experimental and Theoretical Research Involving Problems of Both a Chemical and Physical Nature . 1996,第1a2期

机译：强约束机制中的量子点：准零维半导体增益的模型系统
3. Super-statistical description of thermo-magnetic properties of a system of 2D GaAs quantum dots with gaussian confinement and Rashba spin-orbit interaction [J] . Physica, A. Statistical mechanics and its applications . 2020,第期

机译：具有高斯监禁和Rashba旋转轨道相互作用的2D GaAs量子点系统的热磁性的超级统计描述
4. Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors [C] . Harald Giessen, Optical Sciences Ctr./Univ. of Arizona, Stuttgart, Physics and Simulation of Optoelectronic Devices IV . 1996

机译：强约束机制中的量子点：准零维半导体增益模型系统
5. Characterization of single-electron tunneling in silicon nano-transistors with coupled-donor quantum dots [D] . Afiff Adnan Fatahillah 2019

机译：耦合施主量子点的硅纳米晶体管中单电子隧穿的表征
6. Observation of Distinct Two-Photon Transition Channels in CdTe Quantum Dots in a Regime of Very Strong Confinement [O] . Marcelo Gonçalves Vivas, José Carlos Leandro De Sousa, Leonardo De Boni, 2017

机译：CdTe量子点中非常强约束下不同的双光子跃迁通道的观察
7. Single-electron charging and detection in a laterally-coupled quantum dot circuit in the few-electron regime [O] . Zhang, L. -X., Matagne, P., Leburton, J. P., 2003

机译：单电子充电和横向耦合量子探测少电子态中的点电路

Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime

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