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首页> 外文期刊>Physica, B. Condensed Matter >Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon
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Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

机译：热处理的切克劳斯基生长硅中应力诱导的热供体形成变化

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摘要

Formation processes of oxygen-related thermal donors in Czochralski-grown silicon annealed at T = 450degreesC under high hydrostatic pressures at P greater than or equal to 1 GPa are studied by means of electrical and optical measurements. As for heat treatment of materials at atmospheric pressure, the formation of thermal double donors (TDDs) takes also place in Czochralski-grown silicon subjected to compressive stresses during heat treatment. However, their formation rate turned out to be much larger than that observed under normal conditions, even in carbon-rich materials. This strongly enhanced formation of thermal donors is believed to be due to increasing diffusivity of oxygen under pressures. In addition to the TDDs, other shallow and deep thermal donors are also making their appearance in silicon heat treated under high pressures. (C) 2003 Elsevier B.V. All rights reserved. [References: 11]
机译：通过电学和光学测量研究了在高静水压力下，P = 1 GPa，在T = 450℃退火的Czochralski生长的硅中与氧有关的热供体的形成过程。对于大气压下的材料热处理，热双施主（TDD）的形成也发生在切克劳斯基（Czochralski）生长的硅中，硅在热处理过程中受到压缩应力。但是，即使在富碳材料中，它们的形成速率也比正常条件下观察到的要大得多。据信这种强烈增强的热供体的形成是由于在压力下氧气扩散性的增加。除了TDD，其他浅和深的热供体也出现在高压下热处理过的硅中。 （C）2003 Elsevier B.V.保留所有权利。 [参考：11]

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