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首页> 外文期刊>Physica, B. Condensed Matter >Contribution of the disturbed dislocation slip planes to the electrical properties of plastically deformed silicon
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Contribution of the disturbed dislocation slip planes to the electrical properties of plastically deformed silicon

机译：扰动的位错滑移面对塑性变形硅的电性能的贡献

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摘要

The deep-level centers introduced by the plastic deformation at 680degreesC in p-type silicon are quantitatively studied by the electron beam induced current (EBIC) and DLTS techniques. It is shown that the DLTS signal is higher than that could be ascribed to the centers located at (or close to) dislocations. In opposite, the number of electrically active defects in the dislocation trails, which is estimated from the EBIC contrast, easily explains the DLTS signal. The possible nature of defects in the dislocation trails is discussed. (C) 2003 Elsevier B.V. All rights reserved. [References: 12]
机译：通过电子束感应电流（EBIC）和DLTS技术对p型硅在680℃塑性变形引入的深层中心进行了定量研究。结果表明，DLTS信号高于归因于位于（或接近）位错的中心的信号。相反，由EBIC对比度估算的位错迹线中电活性缺陷的数量可以轻松解释DLTS信号。讨论了位错痕迹中缺陷的可能性质。 （C）2003 Elsevier B.V.保留所有权利。 [参考：12]

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