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首页> 外文期刊>Physica, B. Condensed Matter >Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxy
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Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxy

机译：分子束外延生长的Be掺杂GaAs表面附近的深层缺陷

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摘要

Metal-semiconductor contacts on highly Be-doped GaAs layers grown by moelcualr beam epitaxy are used to examine deep electronic states by deep-level transient Fourier spectroscopy. Two hole traps at 0.40 and 0.70 eV are found, which are associated with the Ga_(As) (Ga atom on As site) defect. The concentration versus depth profile demonstrates that the intrinsic defect is formed in a 100 em thick layer near the as-grown surface. Our experimental results confirm thermodynamical calculations for nearly Ga-rich conditions during growth. The Ga_(As) formation energy strongly decreases, when the Fermi level is shifted from the valence band edge to midgap position. The concentration versus depth profile therefore reflects the change of the Ga_(As) formation energy near the GaAs surface during growth. The energy to form Ga_(As) defects at the surface of p-type GaAs is determined to be 1.1 eV, in full agreement with theoretical results.
机译：通过分子束外延生长的高度掺杂的GaAs层上的金属半导体触点用于通过深层瞬态傅立叶光谱法检查深电子状态。发现两个在0.40和0.70 eV的空穴陷阱，它们与Ga_（As）（砷位点上的Ga原子）缺陷相关。浓度与深度的关系曲线表明，固有缺陷是在生长表面附近的100 em厚的层中形成的。我们的实验结果证实了生长过程中几乎富含Ga的条件的热力学计算。当费米能级从价带边缘移动到中间能隙位置时，Ga_（As）形成能大大降低。因此，浓度与深度的关系曲线反映了生长过程中GaAs表面附近Ga_（As）形成能的变化。确定在p型GaAs表面形成Ga_（As）缺陷的能量为1.1 eV，与理论结果完全一致。

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