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首页> 外文期刊>Physica, B. Condensed Matter >Influence of dioxygen and annealing process on the transport properties of nickel phthalocyanine Schottky-barrier devices
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Influence of dioxygen and annealing process on the transport properties of nickel phthalocyanine Schottky-barrier devices

机译：双氧和退火工艺对镍酞菁肖特基势垒器件输运性能的影响

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摘要

Schottky-barrier cells of the type (Al/p-NiPc/Au) are fabricated by successive vacuum depositions of p-NiPc thin films and aluminium fingers onto an ohmic gold electrode. The electrical conductivity has been measured both after exposure to oxygen for 10 days and after annealing at temperature up to 423 K. These cells showed high rectification in the oxygen-doped process. Current density-voltage characteristics under forward bias (aluminium electrode negative) are found to be due to space-charge-limited conduction controlled by a discrete trap level at lower voltage sections and by an exponential distribution of traps at higher voltage regions. Under reverse bias, the conduction processes are interpreted in terms of a transition from electrode-limited Schottky emission to the bulk-limited Poole-Frenkel effect. The effect of annealing showed similar behaviour and resulted in lowering the current density due to oxygen desorption. The linearity of the C~(-2)-V dependence for oxygen-doped devices is associated with a homogenous distribution of the impurities inside the space-charge region and also provided evidence of uniform doping.
机译：（Al / p-NiPc / Au）型肖特基势垒电池是通过将p-NiPc薄膜和铝指状物连续真空沉积到欧姆金电极上制成的。在暴露于氧气10天后以及在最高423 K的温度下退火之后，都已测量了电导率。这些电池在掺氧过程中显示出高整流能力。发现正向偏置下的电流密度-电压特性（铝电极为负）归因于空间电荷受限的传导，该传导受较低电压部分的离散陷阱能级和较高电压区域的陷阱的指数分布控制。在反向偏置下，传导过程的解释是从电极限制的肖特基发射到体积限制的Poole-Frenkel效应的过渡。退火的效果显示出相似的行为，并且由于氧的解吸导致电流密度降低。氧掺杂器件的C〜（-2）-V依赖性的线性与空间电荷区域内杂质的均匀分布有关，也为均匀掺杂提供了证据。

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