Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs

T. Hakata; H. Ohyama; S. Kuroda; E. Simoen; C. Claeys; T. Kudou; K. Kobayashi; M. Nakabayashi; M. Yoncoka; Y. Takami; H. Sunaga; K. Miyahara

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Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs

机译：诱导晶格缺陷对AlGaAs / GaAs p-HEMTs性能下降的影响

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Irradiation damage and its recovery behavior resulting from thermal annealing in AlGaAs/GaAs pseudomorphic HEMTs, subjected to 1-MeV electrons, 1-MeV fast neutrons and 220-MeV carbon, are studied. The drain current and effective mobility decrease after irradiation, while the threshold voltage increases in positive direction. The decrease of the mobility is thought to be due to the scattering of channel electrons with the induced lattice defects and also to the decrease of the electron density in the two-dimensional electron gas (2DEG) region.

机译：研究了在1MeV电子，1MeV快中子和220MeV碳的作用下，AlGaAs / GaAs伪晶HEMT中的热退火引起的辐照损伤及其恢复行为。辐射后漏极电流和有效迁移率降低，而阈值电压沿正方向增加。迁移率的降低被认为是由于具有诱导的晶格缺陷的沟道电子的散射以及二维电子气（2DEG）区域中电子密度的降低。

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《Physica, B. Condensed Matter》 |1999年第0期|共3页
作者
T. Hakata; H. Ohyama; S. Kuroda; E. Simoen; C. Claeys; T. Kudou; K. Kobayashi; M. Nakabayashi; M. Yoncoka; Y. Takami; H. Sunaga; K. Miyahara;
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正文语种 eng
中图分类物理学;
关键词
AlGaAs/GaAs p-HEMTs; radiation damage; induced deep levels;

机译：AlGaAs / GaAs p-HEMTs;辐射损伤;诱导的深能级;

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1. Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs [J] . T. Hakata, H. Ohyama, S. Kuroda, Physica, B. Condensed Matter . 1999,第0期

机译：诱导晶格缺陷对AlGaAs / GaAs p-HEMTs性能下降的影响
2. The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes [J] . Qiao Yanbin, Feng Shiwei, Xiong Cong, Journal of Applied Physics . 2012,第11期

机译：横向空间烧孔引起的应力对大面积AlGaAs / GaAs激光二极管退化的影响
3. Kinetics of non-radiative-defect-related degradation in GaAs/AlGaAs heterojunction bipolar transistors [J] . Wang H., Hopgood AA., Ng GI. Journal of Physics, D. Applied Physics: A Europhysics Journal . 1998,第21期

机译：GaAs / AlGaAs异质结双极晶体管中与辐射无关的退化的动力学
4. Impact of Lattice Defects on Device Performance of AlGaAs/GaAs p-HEMTs [C] . K. Kobayashi, H. Ohyama, T. Hakata, International Workshop on Beam Injection Assessment of Microstructures in Semiconductors . 2001

机译：晶格缺陷对Algaas / GaAs P-Hemts器件性能的影响
5. Three wave mixing in Periodically Quantum-Well-Intermixed GaAs:AlGaAs superlattices: Modeling, Optimization, and Parametric Generation. [D] . Sigal, Iliya. 2010

机译：GaAs：AlGaAs超晶格在周期性量子阱混合中的三波混合：建模，优化和参数生成。
6. Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics [O] . Matteo Buffolo, Alessandro Magri, Carlo De Santi, 2021

机译：InGaAs LED的逐步降解：对非辐射寿命的影响和缺陷特征的提取
7. Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's [O] . McNally, P. J., Tuomi, T., Herbert, P. A. F., 1996

机译：同步加速器X射线形貌分析工艺步骤对AlGaAs / InGaAs p-HEMT的制造的影响
8. Deep-Level Transient Spectroscopy Studies of Defects in GaAs-AlGaAs Superlattices [R] . Martin, P. A., Hess, K., Emanuel, M., 1986

机译：Gaas-alGaas超晶格中缺陷的深能级瞬态光谱研究

Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs

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