Novel half-metallic films of Co(2)MnZ (Z = Si, Ge) coated with Mn layers

Ishida S.; Nagayoshi H.; Asano S.; Fujii S.

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Novel half-metallic films of Co(2)MnZ (Z = Si, Ge) coated with Mn layers

机译：涂有Mn层的Co（2）MnZ（Z = Si，Ge）的新型半金属膜

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Electronic structures were calculated for the films of Co(2)MnZ (Z = Si, Ge) coated with Mn and Cu. The obtained results are as follows: (1) the (0 0 1) and (1 1 1) films coated with two Mn layers have the possibility to be half-metallic (HM), (2) the magnetic moments on the second Mn layer from the surface are antiparallel to the other moments. The second fact indicates the presence of novel HM materials because HM materials are usually ferromagnets. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 10]

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《Physica, B. Condensed Matter》 |1998年第4期|共9页
作者
Ishida S.; Nagayoshi H.; Asano S.; Fujii S.;
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正文语种 eng
中图分类物理学;
关键词
Half-metallic; Electronic structure; Films; Magnetic moment; Co(2)mnz;

机译：半金属;电子结构;薄膜;磁矩;Co（2）mnz;

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1. In Situ Electrochemical Mn(Ⅲ)/Mn(Ⅳ) Generation of Mn(Ⅱ)O Electrocatalysts for High-Performance Oxygen Reduction [J] . Han Tian, Liming Zeng, Yifan Huang, 纳微快报：英文版 . 2020,第011期
2. Novel half-metallic films of Co(2)MnZ (Z = Si, Ge) coated with Mn layers [J] . Ishida S., Nagayoshi H., Asano S., Physica, B. Condensed Matter . 1998,第3a4期

机译：涂有Mn层的Co（2）MnZ（Z = Si，Ge）的新型半金属膜
3. Quantitative analysis of anisotropic magnetoresistance in Co_2MnZ and Co_2FeZ epitaxial thin films: A facile way to investigate spin-polarization in half-metallic Heusler compounds [J] . Y. Sakuraba, S. Kokado, Y. Hirayama, Journal of Applied Physics . 2014,第17期

机译：Co_2MnZ和Co_2FeZ外延薄膜中各向异性磁阻的定量分析：研究半金属Heusler化合物自旋极化的一种简便方法
4. Investigations of the Structural, Electronic, Magnetic, and Half-Metallic Behavior of Co(2)MnZ (Z = Al, Ge, Si, Ga) Full-Heusler Compounds [J] . Dahmane F., Doumi B., Mogulkoc Y., Journal of Superconductivity and Novel Magnetism . 2016,第3期

机译：Co（2）MnZ（Z = Al，Ge，Si，Ga）全Heusler化合物的结构，电子，磁性和半金属行为的研究
5. Stability of Half-metallic Behavior with Lattice Variation for Fe_2MnZ (Z= Si, Ge, Sn) Heusler Alloy [C] . Vivek Kumar Jain, N. Lakshmi, Rakesh Jain International Conference on Condensed Matter and Applied Physics . 2017

机译：FE_2MNZ（Z = Si，Ge，Sn）Heusler合金的晶格变异的半金属行为的稳定性
6. Spin-polarized transport and magnetization reversal behavior of transition metal and half-metallic chromium dioxide thin films and multilayers . [D] . Anguelouch, Alexandre. 2003

机译：过渡金属和半金属二氧化铬薄膜和多层膜的自旋极化输运和磁化反转行为。
7. Solvent-dependent self-assembly of two dimensional layered perovskite (C6H5CH2CH2NH3)2MCl4 (M = Cu Mn) thin films in ambient humidity [O] . Garam Park, In-Hwan Oh, J. M. Sungil Park, -1

机译：二维层状钙钛矿（C6H5CH2CH2NH3）2MCl4（M = CuMn）薄膜在环境湿度下与溶剂有关的自组装
8. Ab initio design of half-metallic fully compensated ferrimagnets: The case of Cr2MnZ (Z=P, As, Sb, and Bi) [O] . Galanakis I., Özdogan K., Sasioglu E., 2007

机译：半金属完全补偿铁酸盐的从头算设计：以Cr2MnZ（Z = P，As，Sb和Bi）为例
9. Tunneling Evidence of Half-Metallic Ferromagnetism in the Colossal Magnetoresistive La(0.7)Ca(0.3)MnO(3) and La(0.7)Sr(0.3)Mn0(3) Films [R] . Gupta, A. 1998

机译：巨磁阻La（0.7）Ca（0.3）mnO（3）和La（0.7）sr（0.3）mn0（3）薄膜中半金属铁磁性的隧穿证据

Novel half-metallic films of Co(2)MnZ (Z = Si, Ge) coated with Mn layers

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