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首页> 外文期刊>Physica, B. Condensed Matter >Lattice defects in silicon rapidly solidified from the melt
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Lattice defects in silicon rapidly solidified from the melt

机译：硅中的晶格缺陷从熔体中迅速凝固

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摘要

The behaviors of melting and rapid solidification of Si have been studied by in situ ultra-high-voltage electron microscopy (UHVEM). Quenching experiments from a partly molten state have also been carried out. The lattice defects introduced are examined in detail by conventional transmission electron microscopy (C-TEM). Planar defects, dislocations, and defect clusters are found to form in the specimens. The results indicate that thermal point defects are associated with the formation of induced defects. Thermally formed stacking fault tetrahedra exhibit that clustering and the collapse of thermal vacancies actually occur in Si at high temperatures. Some dislocations are helical, and this shows that a strong interaction exists between induced dislocations and thermal point defects during cooling from high temperatures.
机译：通过原位超高压电子显微镜（UHVEM）研究了硅的熔化和快速凝固行为。还进行了从部分熔融状态的淬火实验。引入的晶格缺陷通过常规的透射电子显微镜（C-TEM）进行了详细检查。发现在样品中形成了平面缺陷，位错和缺陷簇。结果表明，热点缺陷与诱导缺陷的形成有关。热形成的堆垛层错四面体显示出，硅在高温下实际上发生了聚集和热空位的崩溃。一些位错是螺旋形的，这表明在高温冷却过程中，诱发的位错与热点缺陷之间存在很强的相互作用。

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