...
首页> 外文期刊>Physica, B. Condensed Matter >Ortho and para interstitial H-2 in silicon
【24h】

Ortho and para interstitial H-2 in silicon

机译:硅中的邻位和对位间隙H-2

获取原文
获取原文并翻译 | 示例
           

摘要

H-2 trapped at the interstitial T site in Si is studied by Raman scattering. Both ortho and para nuclear-spin states of H-2 and D-2 have been observed. It is shown that the Raman signals of H-2 and D-2 in the J = 0 state, where J is the rotational quantum number, disappear preferentially from the spectra during laser excitation or prolonged storage at room temperature in the dark. This surprising behavior is tentatively explained by different diffusion rates of H-2 in the J = 0 and 1 states. (C) 2003 Elsevier B.V. All rights reserved. [References: 11]
机译:通过拉曼散射研究了在Si的间隙T位置处捕获的H-2。已经观察到H-2和D-2的邻核自旋态和对核自旋态。结果表明,在J = 0的状态下,H-2和D-2的拉曼信号(其中J为旋转量子数)在激光激发或在黑暗中室温下长时间存储期间从光谱中优先消失。尝试通过在J = 0和1状态下H-2的不同扩散速率来解释这种令人惊讶的行为。 (C)2003 Elsevier B.V.保留所有权利。 [参考:11]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号