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首页> 外文期刊>Physica, B. Condensed Matter >Carbon-related complexes in neutron-irradiated silicon
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Carbon-related complexes in neutron-irradiated silicon

机译：中子辐照硅中与碳有关的配合物

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In this work, we have studied point defects in carbon-doped Si material, irradiated by fast neutrons, via the observation of the Infrared absorption spectra. We mainly focus on carbon-related defects and their complexing with primary defects. We discuss the localized vibrational mode bands related to these defects, their annealing behavior and their interactions. Infrared spectra recorded at room temperature reveal the presence of a band at 544 cm(-1), appearing only in C-rich Si, and showing similar thermal stability to that of the di-carbon (CiCs) defect. In addition, its amplitude scales with the carbon content of the material. We attributed this band to the (CiCs) center. Two bands, at 987 and 993 cm(-1) were attributed to the CiCs(Si-I) center. Furthermore, the origin of a C-related band at 943 cm(-1) is discussed. (C) 2003 Elsevier B.V. All rights reserved. [References: 16]
机译：在这项工作中，我们通过观察红外吸收光谱研究了快中子辐照的碳掺杂硅材料中的点缺陷。我们主要关注与碳有关的缺陷及其与主要缺陷的复合。我们讨论了与这些缺陷，退火行为及其相互作用有关的局部振动模态带。在室温下记录的红外光谱揭示了在544 cm（-1）处存在一个谱带，仅在富含C的Si中出现，并且显示出与二碳（CiCs）缺陷相似的热稳定性。此外，其幅度与材料的碳含量成比例。我们将此频段归因于（CiCs）中心。 CiCs（Si-I）中心归因于987和993 cm（-1）处的两个谱带。此外，讨论了943 cm（-1）处C相关谱带的起源。 （C）2003 Elsevier B.V.保留所有权利。 [参考：16]

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