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首页> 外文期刊>Physica, B. Condensed Matter >I-V characteristics of ultrathin Ag-SiO multilayer structures
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I-V characteristics of ultrathin Ag-SiO multilayer structures

机译：超薄Ag-SiO多层结构的I-V特性

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The I-V characteristics of ultrathin Ag-SiO multilayer structures having identity periods of similar to109 Angstrom is measured under the influence of a variable voltage across the samples and under a variation of temperature in the temperature range 300-35 K. The investigation showed insignificant dependence of the samples' resistances on temperature. However, the dependence of those resistances on voltages applied across the samples and on currents passing through them was distinct. The dependence of the resistance on voltage was of a non-ohmic nature exhibiting a negative conductivity state possessed by these Ag-SiO multilayer structures. This was similar to the behavior originally reported for Ag-SiO superlattices of the same period, which except for their large number of layers, were of specifications identical to the present samples. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 15]
机译：在样品两端的可变电压的影响下以及在300-35 K的温度范围内的温度变化下，测量了具有相似于109埃的同一性周期的超薄Ag-SiO多层结构的IV特性。样品的温度电阻。但是，这些电阻对施加在样品上的电压和通过样品的电流的依赖性是明显的。电阻对电压的依赖性是非欧姆性质的，表现出这些Ag-SiO多层结构所具有的负导电状态。这类似于最初报告的同一时期的Ag-SiO超晶格的行为，除了其层数众多外，其规格与本样品相同。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：15]

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