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首页> 外文期刊>Physica, B. Condensed Matter >Two-level tunnel resistance fluctuations at mechanically controllable break junctions in He exchange gas
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Two-level tunnel resistance fluctuations at mechanically controllable break junctions in He exchange gas

机译：He交换气体中机械可控的断裂连接处的两级隧道电阻波动

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摘要

The tunnel resistance between two metallic electrodes of a mechanically controllable break junction, measured as a function of electrode separation, displays a clear deviation from exponential behavior when He is adsorbed at the electrodes at low temperatures. At T = 1.2 K, two-level resistance fluctuations occur in a limited resistance range which are attributed to transfers of He atoms between adsorption potential minima. The transfer rate varies with the applied bias voltage to a power p, which is between 1.3 and 1.7 for He-4, and about 2 for He-3. This bias dependence may be due to inelastic interactions between tunneling electrons and the adsorbed He. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 25]
机译：当电极在低温下吸附He时，作为电极间距的函数进行测量的可机械控制的断开结的两个金属电极之间的隧道电阻显示出与指数行为的明显偏差。在T = 1.2 K时，在有限的电阻范围内会发生两级电阻波动，这归因于He原子在最小吸附电位之间的转移。传输速率随施加到电源p的偏置电压而变化，对于He-4，功率p在1.3到1.7之间，对于He-3约为2。这种偏倚依赖性可能是由于隧穿电子与吸附的He之间发生非弹性相互作用。 （C）1998 Elsevier Science B.V.保留所有权利。 [参考：25]

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