Neutralization of manganese by hydrogen in GaAs

Bouanani-Rahbi R.; Clerjaud B.; Theys B.; Lemaitre A.; Jomard F.

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Neutralization of manganese by hydrogen in GaAs

机译：GaAs中氢对锰的中和作用

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Ga1-xMnxAs samples, with x in the percent range, grown by molecular beam epitaxy at low temperature have been hydrogenated or deuterated by exposure to plasmas. At liquid helium temperature, the samples show local vibrational modes (LVMs) at about 2141 and 1546 cm(-1) in hydrogenated and deuterated layers, respectively. These LVMs evidence the formation of electrically inactive complexes involving manganese and hydrogen. Hydrogen sits most likely in bond center location between manganese and arsenic atoms-, it is mainly bonded with the arsenic atom. It is argued that the manganese-hydrogen complex is the unidentified acceptor hydrogen complex discussed in literature. (C) 2003 Elsevier B.V. All rights reserved. [References: 8]

机译：通过在低温下通过分子束外延生长的x在百分比范围内的Ga1-xMnxAs样品已经通过暴露于等离子体来氢化或氘化。在液氦温度下，样品在氢化层和氘代层中分别显示出大约2141和1546 cm（-1）的局部振动模式（LVM）。这些LVM证明形成了涉及锰和氢的电惰性复合物。氢最有可能位于锰和砷原子之间的键中心位置，它主要与砷原子键合。有人认为锰-氢配合物是文献中讨论的未知的受体氢配合物。（C）2003 Elsevier B.V.保留所有权利。 [参考：8]

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《Physica, B. Condensed Matter》 |2003年第0期|共4页
作者
Bouanani-Rahbi R.; Clerjaud B.; Theys B.; Lemaitre A.; Jomard F.;
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正文语种 eng
中图分类物理学;
关键词
Gaas; Manganese; Hydrogen; Semiconductors;

机译：Gaas;锰;氢;半导体;

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1. Neutralization of manganese by hydrogen in GaAs [J] . Bouanani-Rahbi R., Clerjaud B., Theys B., Physica, B. Condensed Matter . 2003,第0期

机译：GaAs中氢对锰的中和作用
2. Selective Hydrogenation of alpha,beta-Unsaturated Aldehydes and Ketones using Novel Manganese Oxide and Platinum Supported on Manganese Oxide Octahedral Molecular Sieves as Catalysts [J] . ChemCatChem . 2013,第2期

机译：使用新的锰氧化物和铂金属氧化锰八面体分子筛作为催化剂的新型氧化锰和铂的选择性氢化α，β-不饱和醛和酮
3. Energy spectra and the third-order nonlinear optical properties in GaAs/AlGaAs core/shell quantum dots with a hydrogenic impurity [J] . Jian-Hui Yuan, Ni Chen, Zhi-Hai Zhang, Superlattices and microstructures . 2016,第deca期

机译：GaAs / AlGaAs核/壳量子点中含氢杂质的能谱和三阶非线性光学性质
4. Neutralization of manganese by hydrogen in GaAs [C] . R. Bouanani-Rahbi, B. Clerjaud, B. Theys, International conference on defects in semiconductors . 2003

机译：通过在GaAs中的氢气中和锰
5. The energetic and wave function properties of atomic, molecular, and solid state systems: Hydrogen ion and the lithium, neon, and phosphorus atoms; Boron trifluoride-ammonia molecular complex and methyl derivatives; Vanadium, chromium, and manganese ions and neutral manganese transition metal impurities in silicon [D] . Pink, Roger H. 2010

机译：原子，分子和固态系统的能量和波函数性质：氢离子以及锂，氖和磷原子；三氟化硼-氨分子配合物和甲基衍生物；硅中的钒，铬和锰离子以及中性锰过渡金属杂质
6. Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells [O] . Shu-Shen Li, Jian-Bai Xia 2009

机译：GaAs / GaAlAs量子阱中氢供体杂质的线性Rashba模型
7. Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures [O] . K. Wagenhuber, H. -p. Tranitz, M. Reinwald, 2008

机译：锰污染对高迁移率Gaas / alGaas异质结构的影响
8. Semiconductor Electrodes. 27. The p- and n-GaAs- N,N'-Dimethyl-4,4'-Bipyridinium System. Enhancement of Hydrogen Evolution on p-GaAs and Stabilization of n-GaAs Electrodes [R] . Fan, F. R. F., Reichman, B., Bard, A. J. 1979

机译：半导体电极。 27.对 - 和n-Gaas-N，N'-二甲基-4,4'-联吡啶体系。增强p-Gaas上的氢析出和n-Gaas电极的稳定化

Neutralization of manganese by hydrogen in GaAs

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