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首页> 外文期刊>Physica, B. Condensed Matter >Annealing kinetics of the di-carbon radiation-damage centre in edge-defined film-fed growth silicon
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Annealing kinetics of the di-carbon radiation-damage centre in edge-defined film-fed growth silicon

机译：边缘确定的薄膜喂养生长硅中二碳辐射损伤中心的退火动力学

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摘要

A systematic study of the isothermal annealing effect on the thermal destruction of the G centre was carried out at various annealing temperatures between 180 deg C and 240 deg C for e~--irradiated EFG Si samples with various radiation doses between 5 X 10~(17) cm~(-2). We show that the thermal decay of the concentration of the G centre (monitored by the 969 meV 'G' zero-phonon line absorption) can be explained by the combination of two independent processes through the break-up of the G centres and the capture of migrating defects. By analysing the rates of changes of [G], [C_i] (interstitial carbon atoms), and [T] (migrating defects), the two exponential decay behaviour of the G centres during annealing was modelled successfully. With this decay model, it was shown that the time constant of the slow decay process has the temperature dependence with the two exponential factors of the break-up energy of the G centre (1.934) eV) and the migration energy of carbon atom (0.890 eV). For the fast decay process, the temperature dependence of the time constant was fitted with a single exponential curve and the migration energy of the defect was obtained as E_m~d = 0.879 eV.
机译：对电子辐照的EFG Si样品在180℃至240℃的不同退火温度下等温退火对G中心热破坏的影响进行了系统的研究，辐照剂量为5 X 10〜（ 17）cm〜（-2）。我们表明，G中心浓度的热衰减（通过969 meV'G'零声子线吸收监测）可以通过G中心的分解和捕获两个独立过程的结合来解释。迁移缺陷。通过分析[G]，[C_i]（间隙碳原子）和[T]（迁移缺陷）的变化速率，成功地模拟了退火过程中G中心的两个指数衰减行为。利用该衰变模型表明，慢衰变过程的时间常数与温度有关，与G中心分解能（1.934）eV）和碳原子迁移能（0.890）的两个指数因子有关。 eV）。对于快速衰变过程，时间常数的温度依赖性与单条指数曲线拟合，缺陷的迁移能为E_m〜d = 0.879 eV。

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