Electrical resistivity of amorphous simple metals at moderately low temperatures

Yu. P. Krasny; J. Krawczyk; N. P. Kovalenko; V. T. Shvets

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Electrical resistivity of amorphous simple metals at moderately low temperatures

机译：非晶态简单金属在适度低温下的电阻率

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The dependence of electrical resistivity p(T) on temperature T in a region of moderate temperatures is considered for amorphous simple metals. It is shown within the Faber-Ziman theory that the ratio [#rho#(T)-#rho#(0)]/T~2 has a maximum in the temperature region 10 K <= T <= 100 K The theory is illustrated by numerical calculations performed for hard-sphere models of amorphous Mg and Zn.

机译：对于非晶态简单金属，可以考虑电阻率p（T）对温度T的依赖性。在Faber-Ziman理论中显示，比率[＃rho＃（T）-＃rho＃（0）] / T〜2在温度范围10 K <= T <= 100 K时具有最大值。通过对非晶态Mg和Zn的硬球模型执行的数值计算来说明。

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《Physica, B. Condensed Matter》 |1999年第4期|共6页
作者
Yu. P. Krasny; J. Krawczyk; N. P. Kovalenko; V. T. Shvets;
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正文语种 eng
中图分类物理学;
关键词
electrical resistivity; temperature dependence; electron scattering; amorphous metal;

机译：电阻率;温度依赖性;电子散射;非晶态金属;

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专利

1. Electrical resistivity of amorphous simple metals at moderately low temperatures [J] . Yu. P. Krasny, J. Krawczyk, N. P. Kovalenko, Physica, B. Condensed Matter . 1999,第3a4期

机译：非晶态简单金属在适度低温下的电阻率
2. Electrical resistivity of simple metal amorphous alloys at moderately low temperatures [J] . Krasny YP., Krawczyk J., Kaptur M., Physica, B. Condensed Matter . 2003,第3a4期

机译：简单金属非晶态合金在适度低温下的电阻率
3. Electron transport process in simple amorphous metals at moderately low temperatures [J] . Krasny YP., Shvets VT., Krawczyk J., Journal of Molecular Liquids . 2001,第1a3期

机译：简单的非晶态金属在中等低温下的电子传输过程
4. Zero Temperature Coefficient and Stability of Electrical Resistibility of Ni-Si-B Amorphous Alloys [C] . Teruo Bitoh, Akihiro Makino, Matsuo Zama, International Symposium on Metastable, Mechanically Alloyed and Nanocrystalline Materials . 2005

机译：Ni-Si-B非晶合金的电阻性零温度系数和稳定性
5. Low temperature electrical resistivity investigations of non-Fermi liquid behavior in strongly correlated f-electron systems. [D] . Dickey, Robert Paul. 2001

机译：在强相关f电子系统中非费米液体行为的低温电阻研究。
6. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness [O] . Ye Kyun Kim, Cheol Hyoun Ahn, Myeong Gu Yun, -1

机译：具有高性能和超薄厚度的低温可加工非晶InGaZnO薄膜晶体管的周期性脉冲湿退火方法
7. Measurements of the electrical resistivity of simple metals at low temperatures [O] . Ribot J.H.J.M. 1979

机译：低温下简单金属的电阻率测量
8. Electrical Resistivity in Amorphous Metals: Consequences of Phonon Ineffectiveness in the Diffraction Model [R] . Meisel, L. V., Cote, P. J. 1985

机译：非晶金属的电阻率：衍射模型中声子无效的后果

Electrical resistivity of amorphous simple metals at moderately low temperatures

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