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首页> 外文期刊>Physica, C. Superconductivity and its applications >Growth conditions of buffer layers on textured NiW substrates by pulsed-laser deposition
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Growth conditions of buffer layers on textured NiW substrates by pulsed-laser deposition

机译：脉冲激光沉积在带纹理的NiW衬底上缓冲层的生长条件

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摘要

YBCO coated conductor consists of several layers which have many roles such as Ni diffusion barrier, lattices matching and texturing upper layers. Texturing by the ion-beam assisted deposition method (IBAD) increases the total cost significantly, therefore, textured NiW substrates are expected to be used in the neat future because of its low cost. However, an appropriate architecture and/or conditions to deposit buffer layers and the YBCO layer on textured NiW substrates are different from those on IBAD substrates. Growth conditions of the buffer layers on textured NiW substrates were studied in this work by using pulsed-laser deposition (PLD) or electron beam evaporation (E-Beam). Several oxide buffer layers are used for making coated conductors. Since the grain size of NiW is large and its surface is oxidized easily, we investigated the influence of growth conditions of the seed layers on upper layers. Many parameters affect the degree of in-plane grain alignment (AO), for example, distance between the target and the substrate. AO value of CeO2 seed layers on NiW deposited by PILD were not improved although those deposited by E-Beam were improved. YBCO films were deposited on the buffer layers by metal organic deposition using trifluoroacetates (TFA-MOD) and its critical current (I-c) of 310 A/cm at 77 K, 0 T was obtained on Delta phi of 5.4 degrees of the CeO2 seed layer. (C) 2007 Elsevier B.V. All rights reserved.
机译：YBCO涂层导体由几层组成，这些层具有许多作用，例如镍扩散阻挡层，晶格匹配和纹理化上层。通过离子束辅助沉积法（IBAD）进行纹理化会显着增加总成本，因此，由于其成本低廉，有望在未来使用带纹理的NiW基板。但是，在带纹理的NiW基板上沉积缓冲层和YBCO层的适当架构和/或条件与IBAD基板上的架构和/或条件不同。在这项工作中，通过使用脉冲激光沉积（PLD）或电子束蒸发（E-Beam）研究了带纹理的NiW衬底上缓冲层的生长条件。几个氧化物缓冲层用于制造涂层导体。由于NiW的晶粒尺寸大且其表面易于氧化，因此我们研究了种子层的生长条件对上层的影响。许多参数会影响面内晶粒对准（AO）的程度，例如，靶材与基材之间的距离。尽管通过电子束沉积的NiW上的CeO2种子层的AO值没有得到改善，但通过PILD沉积的NiW的AO值没有得到改善。通过使用三氟乙酸盐（TFA-MOD）进行金属有机沉积，将YBCO膜沉积在缓冲层上，其临界电流（Ic）在77 K时为310 A / cm，在5.4度CeO2种子层的δphi上获得0 T 。 （C）2007 Elsevier B.V.保留所有权利。

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