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Local characterization of HTS thin films by laser scanning microscopy

机译:HTS薄膜的激光扫描显微镜局部表征

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A high-resolution spatially resolved study of electrical inhomogeneties in high-T-c thin films by Laser Scanning Microscopy has been carried out. A laser beam was focused onto a submicrometer spot on the surface of a thin film microbridge that induced an increase in its local temperature. Bolometric or thermo-electric effects in the heated region resulted in a voltage change, deltaV, across the sample that has been measured as a function of the beam position (x,y). Direct measurements of the spatial distribution of the critical current density in the film has been performed from the deltaV(x,y) images of HTS microbridges. A system of weak links in the film is observed that may be attributed to the growth island boundaries. A spatial redistribution of the critical current as a function of temperature is observed in this system. It has been demonstrated that for some conditions, the electrical characteristics of the entire microbridge can be determined by only one weak link. The position of the weak links could be observed at room temperature using the thermo-electric response. [References: 8]
机译:通过激光扫描显微镜对高T-c薄膜中的电不均匀性进行了高分辨率的空间分辨研究。激光束聚焦到薄膜微桥表面的亚微米点上,该点导致其局部温度升高。加热区域中的体积计量或热电效应导致整个样品上的电压变化deltaV,该电压变化已根据光束位置(x,y)进行了测量。从HTS微桥的deltaV(x,y)图像可以直接测量薄膜中临界电流密度的空间分布。观察到薄膜中的薄弱环节系统可能归因于生长岛边界。在该系统中观察到临界电流的空间重新分布与温度的关系。已经证明,在某些情况下,整个微桥的电气特性只能通过一个弱连接来确定。弱连接的位置可以使用热电响应在室温下观察到。 [参考:8]

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