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Structure and transport properties of Cr doped La214 system

机译:Cr掺杂La214体系的结构和输运性能

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The structure and normal state transport properties of La sub(1.85-x)Sr sub(0.15-x)Cu sub(1-x)Cr sub(x)O sub(4) (0 less than or equal to x less than or equal to 0.30) have been investigated by means of XRD, resistivity and thermoelectric power. The analysis of experimental results indicates that Cr doping introduces disorder into the system, which causes an obvious metal-insulator (MI) transition in the samples with high doping level. This MI transition can be well interpreted in the context of the Anderson theory of disorder-induced localization. In addition, Cr doping leads to the broad peaks in the S-T curves shifting up to high temperature, which is in contrast to that of the non-magnetic element, Al, doped system. This discrepancy is analyzed in terms of the changes of d-p hybridization and spin correlation.
机译:La sub(1.85-x)Sr sub(0.15-x)Cu sub(1-x)Cr sub(x)O sub(4)的结构和正常态输运性质(0小于或等于x小于或等于通过XRD,电阻率和热电功率研究了等于0.30的电阻)。实验结果分析表明,Cr掺杂将无序引入系统,从而在高掺杂水平的样品中引起明显的金属-绝缘体(MI)转变。 MI过渡可以在安德森(Anderson)的无序诱发定位理论中很好地解释。另外,Cr掺杂导致S-T曲线中的宽峰移至高温,这与非磁性元素Al掺杂系统的峰相反。根据d-p杂交和自旋相关性的变化分析了这种差异。

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