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CHARGE SUSCEPTIBILITY AND CHARGE CORRELATION FUNCTION IN THE D-P MODEL

机译:D-P模型中的电荷敏感性和电荷相关函数

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The properties of the charge fluctuation are investigated in the d-p model with the repulsion U-pd between holes on the nearest-neighbor Cu and O sites and the infinite on-site repulsion U-d at the Cu site. We calculate the charge susceptibility chi(c)(q, i omega(n)) and the charge correlation function S-c(q)=T Sigma(omega n)chi(c)(q, i omega(n)). It is found that S-c(q) has a peak at the Gamma point and a maximum in a ring around the Gamma point. The former is due to T chi(c)(q, 0). Its intensity is proportional to temperature T and strongly enhanced by U-pd. The latter is due to T Sigma(omega n not equal 0)chi(c)(q, i omega(n)) and shows a weak T and U-pd dependence. The intensity of the diffuse X-ray scattering on taking the charge fluctuation into account is also calculated. The result is consistent with the experiments in La2-deltaSrdeltaCuO4. [References: 33]
机译:在d-p模型中研究了电荷波动的性质,其中最近邻Cu和O位置的孔之间具有排斥力U-pd,而Cu位置具有无限的现场排斥U-d。我们计算电荷磁化率chi(c)(q,i omega(n))和电荷相关函数S-c(q)= T Sigma(omega n)chi(c)(q,i omega(n))。发现S-c(q)在伽玛点处具有峰,并且在伽玛点周围的环中具有最大值。前者归因于T chi(c)(q,0)。其强度与温度T成正比,并且受U-pd强烈增强。后者归因于T Sigma(ωn不等于0)chi(c)(q,iω(n)),并且显示出对T和U-pd的依赖性较弱。还计算了考虑到电荷波动的散射X射线散射的强度。结果与La2-deltaSrdeltaCuO4中的实验一致。 [参考:33]

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