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Asymmetric pinning in superconductors with interpenetrating arrays of weak and strong pinning centers

机译:具有弱和强钉扎中心互穿阵列的超导体中的不对称钉扎

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Molecular dynamics simulations of the current-voltage characteristics, V(I), have been performed for regular pinning arrays consisting of two interpenetrating triangular lattices of weak and strong pinning centers. In this case, an applied Lorentz force F-L provides the depinning force which is directed either from weak to strong pinning site or vice versa, depending on the polarity of F-L. This leads to a pronounced asymmetry of the critical driving force F-L(c) needed for the vortex depinning, revealed in our numerical simulations for the vortex lattice originally coinciding with the array of strong pinning centers. The dependence of the F-L(c) asymmetry on the shift of the two pinning sublattices is also investigated. [References: 10]
机译:电流-电压特性V(I)的分子动力学模拟已针对由两个互穿的弱固定中心和强固定中心的三角形晶格组成的常规固定阵列进行。在这种情况下,取决于F-L的极性,施加的洛伦兹力F-L可提供从弱钉扎点指向强钉扎点或反之亦然的反向钉扎力。这导致涡旋脱钉所需的临界驱动力F-L(c)明显不对称,这在我们最初与强钉扎中心阵列重合的旋涡晶格的数值模拟中得到了揭示。还研究了F-L(c)不对称性对两个钉扎子晶格偏移的依赖性。 [参考:10]

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