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首页> 外文期刊>Physica, C. Superconductivity and its applications >Magnetic field dependence of critical currents in PLD RE-Ba-Cu-O (RE = Er, Dy, Gd) film prepared on CeO2 capped IBAD-GZO layers
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Magnetic field dependence of critical currents in PLD RE-Ba-Cu-O (RE = Er, Dy, Gd) film prepared on CeO2 capped IBAD-GZO layers

机译：在盖有CeO2的IBAD-GZO层上制备的PLD RE-Ba-Cu-O（RE = Er，Dy，Gd）膜中的临界电流的磁场依赖性

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摘要

We have fabricated RE1Ba2Cu3O7-delta (RE = Er, Dy, Gd) and YBa2Cu3O7-delta (Y-123) superconductor films with various thickness on pulsed laser deposition (PLD)-CeO2/ion-beam assisted deposition (IBAD)-Gd-Zr-oxide (GZO)/ metal substrates by PLD method and investigated the dependence of critical current density (J(c) on applied magnetic field. In order to fabricate a practical high critical current (I-c coated conductor, we used metal substrate tapes with Delta phi value of 3.7 degrees-7.0 degrees fabricated by the technique of a self-epitaxy method. GdBa2Cu3O7-delta (Gd-123) films showed higher J(c) in magnetic fields than that for Y-123 films. J(c) value of the Gd-123 film was 179,000 A/cm(2) at 3 T and 34,700 A/cm(2) at 6 T at 77 K. Transmission electron microscope (TEM) observation showed that Gd- 123 film had a more defective structure than Y-123 film. These structures may be attributed to high J(c) in high magnetic field. (c) 2005 Elsevier B.V. All rights reserved.
机译：我们已经在脉冲激光沉积（PLD）-CeO2 /离子束辅助沉积（IBAD）-Gd-氧化锆（GZO）/金属基板采用PLD方法，并研究了临界电流密度（J（c）对施加磁场的依赖性。为了制造实用的高临界电流（Ic涂层导体），我们使用了具有通过自外延法制造的Delta phi值为3.7度至7.0度，GdBa2Cu3O7-delta（Gd-123）膜在磁场中的J（c）高于Y-123膜。 Gd-123膜在3 T下的值为179,000 A / cm（2），在77 K在6 T下为34,700 A / cm（2）。透射电子显微镜（TEM）观察表明，Gd-123膜的缺陷更多这些结构可能归因于强磁场中的高J（c）。（c）2005 Elsevier BV保留所有权利。

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