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In situ and ex situ Cu doping of MgB2

机译：原位和异位掺杂MgB2

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The effect of in situ and ex situ Cu doping on MgB2 was studied in the annealing temperature range of 600degreesC - 900 degreesC. Attempts to substitute Cu into MgB2 resulted in the formation of Mg-Cu phases. Within the limits of error, neither lattice strain nor significant alteration in a- and c-axes was introduced by varying annealing temperature. This indicates that all the samples showed negligible Cu substitution or Mg deficiency. Both in situ and ex situ Cu doping caused an increase of density in the samples annealed at 800degreesC by 28% and 26%, respectively. SEM micrographs show that the in Situ samples consist of larger grains with low Cu content as well as agglomerates of fine grains which correspond to Cu rich regions. On the other hand, compositional variation in the ex situ sample is less pronounced. The reaction temperature causes only minor changes in the T-c onset but influences the Superconducting volume fraction. (C) 2004 Elsevier B.V. All rights reserved.
机译：研究了在600℃至900℃退火温度范围内原位和异位掺杂Cu对MgB2的影响。尝试将Cu代入MgB2中导致形成Mg-Cu相。在误差范围内，通过改变退火温度，既不会引入晶格应变，也不会引入a轴和c轴的显着变化。这表明所有样品均显示可忽略不计的铜取代或镁缺乏。原位和异位铜掺杂都会使在800℃退火的样品的密度分别增加28％和26％。 SEM显微照片显示，原位样品由具有低Cu含量的较大晶粒以及对应于富Cu区域的细晶粒的附聚物组成。另一方面，异位样品中的成分变化不太明显。反应温度仅引起T-c起始的微小变化，但会影响超导体积分数。 （C）2004 Elsevier B.V.保留所有权利。

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