...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physica, C. Superconductivity and its applications >Effects of heat treatment and film thickness on microstructure and critical properties of YBCO film processed by TFA-MOD
【24h】

Effects of heat treatment and film thickness on microstructure and critical properties of YBCO film processed by TFA-MOD

机译：热处理和膜厚对TFA-MOD处理的YBCO膜组织和关键性能的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We fabricated YBCO film on an LAO substrate using the TFA-MOD method and evaluated the effects of the heat treatment temperature and film thickness on the microstructure, degree of texture, and critical properties. The calcining and firing processes were performed in the temperature ranges of 370-460 degrees C and 750-800 degrees C, respectively. We found that the phase purity, grain size and orientation, and degree of texture varied with the calcining and firing temperatures. The films fired at 775 degrees C after calcining at 400-430 degrees C showed the highest critical temperature (T-C-onset) of 89.5 K and critical current (I-C) of 40 A/cm-width, which corresponds to a critical current density (J(C)) of 1.8 MA/cm(2). According to the XRD, pole-figure, SEM images, and Raman analysis, these highest critical properties are probably due to the formation of a purer YBCO phase and stronger biaxial texture. In the multi-coated films, the I-C value increased from 39 to 169 A/cm-width as the number of coatings increased from one to four, while the corresponding J(C) was measured to be in the range of 0.8-1.2 MA/cm(2). Both the I-C and J(C) decreased when a further coating was applied due to the degradation of the microstructure. (c) 2006 Elsevier B.V. All rights reserved.
机译：我们使用TFA-MOD方法在LAO基板上制作了YBCO膜，并评估了热处理温度和膜厚对显微组织，织构度和关键性能的影响。煅烧和焙烧过程分别在370-460℃和750-800℃的温度范围内进行。我们发现，相的纯度，晶粒尺寸和取向以及织构度随煅烧和焙烧温度而变化。在400-430摄氏度下煅烧后在775摄氏度下烧制的薄膜显示最高临界温度（TC起始）为89.5 K，临界电流（IC）为40 A / cm宽度，与临界电流密度相对应（ J（C））为1.8 MA / cm（2）。根据XRD，极图，SEM图像和拉曼分析，这些最高的临界性能可能是由于形成了更纯的YBCO相和更强的双轴织构所致。在多层膜中，随着涂层数从一增加到四，IC值从39 A / cm宽增加到169 A / cm宽，而相应的J（C）测得在0.8-1.2 MA范围内/ cm（2）。当进一步涂覆时，由于微观结构的退化，I-C和J（C）均下降。 （c）2006 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号