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首页> 外文期刊>Physica, C. Superconductivity and its applications >Current-induced voltage noise at zero field in thick and thin films of a-MoxSi1-x
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Current-induced voltage noise at zero field in thick and thin films of a-MoxSi1-x

机译：a-MoxSi1-x的厚膜和薄膜中零场处的电流感应电压噪声

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We have performed current-voltage (I-V) and current-induced voltage noise S-V measurements of thick (100 nm) and thin (6 nm) films of amorphous MoxSi1-x to study vortex dynamics in zero field (B = 0) below the transition temperature T-c. It is commonly observed that (i) the large 1/f-type noise appears in the low current region where the I-V characteristics show strong nonlinearity; (ii) with increasing I at fixed T, S-V/V (at low frequency f) decreases; and (iii) by applying small B or with increasing T, S-V/V decreases drastically. These results are consistent with the view that large noise at B = 0 is due to density fluctuations of thermally excited and subsequently grown vortex loops and dissociated vortex-antivortex pairs for thick and thin films, respectively. At high I the spectral shape of the thick film. differs from that of the thin film. For the thick film the presence of the long characteristic time has been suggested. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 13]
机译：我们已经对非晶MoxSi1-x的厚膜（100 nm）和薄膜（6 nm）进行了电流-电压（IV）和电流感应的电压噪声SV测量，以研究转变以下零场（B = 0）中的涡旋动力学温度Tc。通常观察到：（i）大的1 / f型噪声出现在I-V特性表现出强烈非线性的低电流区域; （ii）在固定T处随着I的增加，S-V / V（在低频f处）降低; （iii）通过使用较小的B或增加T，S-V / V急剧降低。这些结果与以下观点一致：B = 0处的大噪声分别是由于热激励和随后生长的涡旋环的密度波动以及厚膜和薄膜的离解涡旋-反涡旋对所致。高I时，厚膜的光谱形状。与薄膜不同。对于厚膜，建议存在较长的特征时间。 （C）2001 Elsevier Science B.V.保留所有权利。 [参考：13]

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