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首页> 外文期刊>Physica, C. Superconductivity and its applications >Growth kinetics of Cu1-xTlxBa2Ca2Cu3O10-y thin films
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Growth kinetics of Cu1-xTlxBa2Ca2Cu3O10-y thin films

机译：Cu1-xTlxBa2Ca2Cu3O10-y薄膜的生长动力学

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Cu1-xTlxBa2Ca2Cu3O10-y(Cu1-xTlx-1223) superconductor thin films has been proven to be very promising candidate in the cuprate family due to their ability to carry very high current densities (2 x 10(7) A/cm(2)). The detailed characterization of these films has been carried out, however, their growth kinetics have not been studied yet. In this paper we have reported the mechanism of growth kinetics of Cu1-xTlx-1223 superconductor thin films. The amorphous phase of Cu1-xTlx-1223 films was deposited on SrTiO3(1 0 0) substrate by rf-sputtering. The sputtered deposited films were placed in a gold capsule along with a precursor pellet containing thallium. The mouth of the An capsule was closed and was heated at different temperatures by keeping the thallium treatment time identical in each experiment (70 min). It was observed from the heat treatment experiments that the growth of Cu1-xTlx-1212 was started around 850 degreesC and completed at 860 degreesC. The partial growth of Cu1-xTlx-1223 started around 870 degreesC and was completed around 890 degreesC. A mix of Cu1-xTlx-1212 and Cu1-xTlx-1223 was produced at the temperature in between 860 and 890 degreesC. However, at the elevated temperatures (above similar to890 degreesC) a mix of Cu1-xTlx-1223, Cu1-xTlx-1234 and Cu1-xTlx-1245 was formed. These observations manifested that the growth of Cu1-xTlx-1223 was accomplished via Cu1-xTlx-1212 by the introduction of an additional CuO2 plane in Cu1-xTlx-1212. The fabrication of Cu1-xTlx-1223 at various temperatures showed the synthesis temperature to be 890 degreesC, at the elevated temperatures a mix of Cu(1-x)Tl(x)1223, Cu1-xTlx-1234 and Cu1-xTlx-1245 was formed. By using different target compositions it is observed that a predominant single phase of higher CuO2 planes (such as Cu1-xTlx-1234 and Cu1-xTlx-1245) could not be prepared from the target containing Sr. However, the phases with higher CuO2 planes could be synthesized from the targets containing only barium in the compound. From the resistivity measurements the T-c of Cu1-xTlx-1212 was 78 K and Cu1-xTlx-1223 was 104 K. The pole figure measurements of (1 0 3) reflection showed these films to be oriented along a and c axes. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 9]
机译：Cu1-xTlxBa2Ca2Cu3O10-y（Cu1-xTlx-1223）超导体薄膜由于具有很高的电流密度（2 x 10（7）A / cm（2））的能力而被证明是铜酸盐家族中非常有希望的候选者。 ）。已经对这些膜进行了详细的表征，但是，尚未对其生长动力学进行研究。在本文中，我们已经报道了Cu1-xTlx-1223超导体薄膜的生长动力学机理。通过rf溅射将Cu1-xTlx-1223薄膜的非晶相沉积在SrTiO3（1 0 0）衬底上。将溅射的沉积膜与含有th的前体颗粒一起置于金胶囊中。在每个实验中保持identical处理时间相同（70分钟），将An胶囊的嘴闭合并在不同温度下加热。从热处理实验中观察到，Cu1-xTlx-1212的生长在850℃左右开始并在860℃完成。 Cu1-xTlx-1223的部分生长在870摄氏度左右开始，并在890摄氏度左右完成。 Cu1-xTlx-1212和Cu1-xTlx-1223的混合物是在860到890摄氏度之间的温度下生产的。但是，在升高的温度下（高于890摄氏度），形成了Cu1-xTlx-1223，Cu1-xTlx-1234和Cu1-xTlx-1245的混合物。这些观察结果表明，通过在Cu1-xTlx-1212中引入另外的CuO2平面，经由Cu1-xTlx-1212实现了Cu1-xTlx-1223的生长。 Cu1-xTlx-1223在不同温度下的制造表明合成温度为890摄氏度，在高温下，Cu（1-x）Tl（x）1223，Cu1-xTlx-1234和Cu1-xTlx-1245的混合物成立了。通过使用不同的靶组成，可以观察到无法从含Sr的靶中制备较高CuO2平面的主要单相（例如Cu1-xTlx-1234和Cu1-xTlx-1245），但是，具有较高CuO2平面的相可以从化合物中仅包含钡的靶子合成。根据电阻率测量，Cu1-xTlx-1212的T-c为78 K，Cu1-xTlx-1223的T-c为104K。（1 0 3）反射的极图测量结果表明，这些薄膜沿a和c轴取向。 （C）2001 Elsevier Science B.V.保留所有权利。 [参考：9]

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