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Asymmetric Coupled Quantum Wells for High Speed Optical Modulators atCommunication Wavelengths

机译：用于通信波长的高速光调制器的非对称耦合量子阱

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摘要

A novel design for electro-optic modulators operating at wavelengths compatiblewith fiber-based optical interconnects and networks is presented. This design uses InGaAs/InAlAs asymmetric coupled quantum wells (ACQWS) to enhance the electro-optic effect within the material and results in a low power modulator capable of high-speed operation. A device was fabricated which shows real charge transfer between the ACQWs. This device shows that without modulation doping and real charge transfer the quantum confined stark effect in InGaAs/InAlAs is insufficient to provide strong modulation at low drive voltages. Standard pump-probe techniques were also used to study the dynamics of charge transfer between the wells. Picosecond recovery times were exhibited by these devices and were found to be independent of the barrier width. Electro-optic modulators, InGaAs/InAlAs Asymmetric Coupled Quantum Wells(ACQWs).

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