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Comparison of the Picosecond Characteristics of Silicon and Silicon-on-SapphireMetal-Semiconductor-Metal Photodiodes

机译：硅和硅 - 蓝宝石金属 - 半导体 - 金属光电二极管的皮秒特性的比较

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The picosecond characteristics of silicon-based metal-semiconductor-metal (MSM)diodes with submicrometer finger spacing and width were studied. Diodes made on both bulk silicon and silicon-on-sapphire (SOS) substrates were measured by a subpicosecond electro-optic sampling system. The response of bulk-silicon MSM diodes was strongly dependent on the wavelength of the excitation light because of the change in penetration depth. The response of SOS diodes, on the other hand. had a weak dependence on wavelength since the thickness of the silicon layer limits the depth of photogenerated carriers. The response of a 200 nm SOS

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Wang, C. C.; Alexandrou, S.; Jacobs-Perkins, D.; Hsiang, T. Y.;
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年度 1994
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总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Electrooptics; Photodiodes; Thickness; Layers; Excitation; Substrates; Sapphire; Penetration; Limitations; Light pulses; Silicon; Quantum efficiency; External; Samplers; Low strength; Frequency response; Short pulses; Optical pumping; Reprints;

机译：电光学;光电二极管;厚度;层;激发;基板;蓝宝石;渗透;限制;光脉冲;硅;量子效率;外部;采样器;低强度;频率响应;短脉冲;光泵浦;重印;

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1. Characteristic Analysis of the Response to Picosecond Pulsed Laser Radiation of a Silicon p-i-n Photodiode [J] . X. A. DOU, X. Q. SUN Lasers in engineering . 2013,第3a4期

机译：硅p-i-n光电二极管对皮秒脉冲激光辐射响应的特性分析
2. Laser-induced damage in a silicon-based photodiode by MHz picosecond laser [J] . Wang Kaixuan, Yu Xuyang, Li Pingxue, Laser Physics: An International Journal devoted to Theoretical and Experimental Laser Research and Application . 2020,第7期

机译：MHz PICOSECOND激光激光引起的硅基光电二极管造成损伤
3. All-silicon avalanche photodiode sensitive at 1.3 mu m with picosecond time resolution [J] . Ghioni M., Lacaita A. IEEE Journal of Quantum Electronics . 1992,第12期

机译：全硅雪崩光电二极管敏感度为1.3μm，皮秒时间分辨率
4. Picosecond characteristics of silicon-on-insulator metal-semiconductor-metal photodiodes [C] . Chia-Chi Wang, Univ. of Rochester, Rochester, Technologies for Optical Fiber Communications . 1994

机译：绝缘体上硅金属半导体金属光电二极管的皮秒特性
5. III-V to silicon wafer fusion for the fused silicon/indium gallium arsenide avalanche photodiode. [D] . Mages, Phillip A. 2003

机译：III-V到硅片熔融，用于熔融的硅/砷化镓铟雪崩光电二极管。
6. Comparison of magnetic resonance imaging-compatible optical detectors for in-magnet tissue spectroscopy: photodiodes versus silicon photomultipliers [O] . Fadi El-Ghussein, Shudong Jiang, Brian W. Pogue, 2014

机译：磁共振成像兼容的用于磁性组织光谱的光学探测器的比较：光电二极管与硅光电倍增管
7. A Study on the Characteristics Analysis and Design of High Sensitivity Silicon Photodiode for Laser Detector [O] . Jun-Myung Lee, Eun-Young Kang, Keon-Jun Park, 2014

机译：激光检测器高灵敏度硅光电二极管特性分析与设计研究
8. Picosecond Silicon Metal-Semiconductor-Metal Photodiode [R] . Hsiang, T. Y., Alexandrou, S., Wang, C. C., 1993

机译：皮秒硅金属半导体金属光电二极管

Comparison of the Picosecond Characteristics of Silicon and Silicon-on-SapphireMetal-Semiconductor-Metal Photodiodes

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