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Diamond Growth on Carbide Surfaces Using a Selective Etching Technique

机译：使用选择性蚀刻技术在硬质合金表面上生长金刚石

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Microwave plasma-enhanced chemical vapor deposition of diamond films on siliconcarbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pre-treatment is necessary to grow these films with a (100) texture. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves concurrent etching of the non-carbon component by atomic fluorine and deposition of diamond. Hydrogen is necessary in the growth process to limit the rapid etching of the substrate by fluorine atoms.... Diamond growth, Carbide surfaces.

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作者
Grannen, K. J.; Chang, R. P.;
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年度 1993
页码
总页数 30
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Cobalt; Electron microscopy; Etching; Fluorine; Hydrogen; Microwaves; Nucleation; Ramanspectroscopy; Silicon carbides; Spectroscopy; Substrates; Surfaces; Tungsten carbides; Crystal growth; Ion beams; Graphite; Plasmas(Physics);

机译：钴;电子显微镜;蚀刻;氟;氢;微波;成核;拉曼光谱;碳化硅;光谱学;基板;表面;碳化钨;晶体生长;离子束;石墨;等离子体（物理学）;

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专利

1. Improvement to the adhesion of polycrystalline diamond films on WC-Co cemented carbides through ion etching of loosely bound growth centers [J] . S.A. Linnik, A.V. Gaydaychuk, V.V. Okhotnikov Surface & Coatings Technology . 2018,第期

机译：通过松散结合生长中心的离子蚀刻改善多晶金刚石薄膜对WC-Co硬质合碳的粘附
2. Two-photon polarization-selective etching of emergent nano-structures on diamond surfaces [J] . Lehmann A., Bradac C., Mildren R. P. Nature Communications . 2014,第Mara期

机译：金刚石表面上出现的纳米结构的双光子偏振选择性蚀刻
3. Two-photon polarization-selective etching of emergent nano-structures on diamond surfaces [J] . A. Lehmann, C. Bradac, R. P. Mildren Nature Communications . 2014,第1期

机译：金刚石表面上出现的纳米结构的双光子偏振选择性蚀刻
4. InP substrate etched with methane reactive ion etching technique: surface characterization and epitaxial growth [C] . Henry, L., Le Corre, Indium Phosphide and Related Materials, 1990. Second International Conference. . 1990

机译：甲烷反应离子刻蚀技术刻蚀的InP衬底：表面表征和外延生长
5. Surface etching of 6H-silicon carbide (0001) and its effects on growth of gallium nitride, aluminum nitride by MOCVD, and silicon carbide by APCVD. [D] . Xie, Zhiyong. 2000

机译：6H-碳化硅（0001）的表面蚀刻及其对氮化镓，MOCVD的氮化铝和APCVD的碳化硅生长的影响。
6. Substantiation of Epitaxial Growth of Diamond Crystals on the Surface of Carbide Fe3AlC0.66 Phase Nanoparticles [O] . Ievgenij M. Dzevin, Alexander A. Mekhed 2017

机译：碳化物Fe3AlC0.66相纳米颗粒表面金刚石晶体外延生长的证实
7. Two-photon polarization-selective etching of emergent nano-structures on diamond surfaces [O] . Lehmann, A, Bradac, C, Mildren, R. P 2014

机译：金刚石表面上出现的纳米结构的双光子偏振选择性蚀刻

Diamond Growth on Carbide Surfaces Using a Selective Etching Technique

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