Simple Controller for Repetitive Cycles in Atomic Layer Epitaxy

机译：原子层外延中重复周期的简单控制器

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A simple controller system has been designed and added to an existing depositionsystem in order to implement deposition of silicon by Atomic Layer Epitaxy (ALE). A Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) system has been modified for automatic control of repetitive cycles of disilane dosing and hydrogen desorption via low energy ion bombardment. The simple configuration of the input/output modules and ease of programming allowed efficient debugging of the installation and a large degree of flexibility in in situ cleaning and in both ALE and CVD experiments. System controller, Atomic Layer Epitaxy.

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Kinosky, D.; Mahajan, A.; Qian, R.; Thomas, S.; Banerjee, S.;
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年度 1992
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总页数 3
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Silicon; Vapor deposition; Automatic; Cleaning; Computer programming; Configurations; Control systems; Desorption; Hydrogen; Ion bombardment; Layers; Low energy;

机译：硅;气相沉积;自动;清洁;计算机编程;配置;控制系统;解吸;氢;离子轰击;层;低能;

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专利

1. Self-limiting growth of ZnS on Si substrates at a growth rate of 0.7 monolayers per operating cycle by atomic layer epitaxy using MOCVD [J] . C. H. Liu, M. Yokoyama, Y. K. Su, Journal of the Society for Information Display . 1997,第2期

机译：使用MOCVD通过原子层外延在每个衬底上以0.7个单层的生长速率在Si衬底上自限生长ZnS
2. AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing [J] . Kao Wei-Chung, Lee Wei-Hao, Yi Sheng-Han, RSC Advances . 2019,第22期

机译：通过层逐层沉积的SiC对SiC的AlN外延，原位原子层退火
3. AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing [J] . Wei-Chung Kao, Wei-Hao Lee, Sheng-Han Yi, RSC Advances . 2019,第22期

机译：通过逐层低温原子层沉积，原位原子层退火在SiC上进行AlN外延
4. Studies Of Cu Atomic Layer Replacement, Formed By Underpotential Deposits, To Form Pt Nanofilms Using Electrochemical Atomic Layer Epitaxy (EC-ALE) [C] . Jay Yu Kim, Youn-Geun Kim, John L. Stickney Electrochemical Society . 2006

机译：通过电化学原子层外延（EC-ALE）形成通过电化学沉积物形成的Cu原子层置换的研究，形成Pt纳米丝
5. Growth Processes of Molecular Beam Epitaxy and Atomic Layer Epitaxy of Ⅱ-Ⅵ Compounds [D] . Zhu Ziqiang 1990

机译：Ⅱ-Ⅵ族化合物分子束外延和原子层外延的生长过程
6. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer in-situ atomic layer annealing [O] . Huan-Yu Shih, Wei-Hao Lee, Wei-Chung Kao, -1

机译：逐层原位原子层退火法制备AlN超薄膜的低温原子层外延
7. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing [O] . Huan-Yu Shih, Wei-Hao Lee, Wei-Chung Kao, 2017

机译：通过层，原位原子层退火的低温原子层对AlN超薄膜的外延

Simple Controller for Repetitive Cycles in Atomic Layer Epitaxy

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