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Surface Photovoltage on Si(111)-(7x7) Probed by Optically-Pumped Scanning Tunneling Microscopy.

机译:光泵浦扫描隧道显微镜探测si(111) - (7x7)表面光电压。

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Scanning Tunneling Microscopy is combined with optical excitation techniques to probe spatially-resolved, non-equilibrium electronic transport processes at the Si(111)-(7x7) surface. Photo-excited carriers separate in the sub-surface space-charge region, producing a surface photovoltage which is detected using the STM tip as a potentiometer. While the photovoltage is uniform on well-ordered regions of Si(111)-(7x7), strong decreases are observed near virtually all defects. Differences in the functional dependence of the photovoltage on the illumination intensity are also observed. The spatial dependence of the photovoltage primarily results from spatial variations in the local surface recombination rate. (jes)

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