首页> 美国政府科技报告 >Implications of the Configuration-Dependent Reactive Incorporation Growth Process for the Group V Pressure and Substrate Temperature Dependence of III-V Molecular Beam Epitaxial Growth and the Dynamics of the Reflection High-Energ
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Implications of the Configuration-Dependent Reactive Incorporation Growth Process for the Group V Pressure and Substrate Temperature Dependence of III-V Molecular Beam Epitaxial Growth and the Dynamics of the Reflection High-Energ

机译:配置相关的反应结合生长过程对III-V分子束外延生长的第V族压力和基板温度依赖性以及反射高能量动力学的影响

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摘要

The critical role of the group V pressure in controlling the dynamic growth front morphology during molecular beam epitaxial growth of III-V compounds is demonstrated via computer simulations based upon a configuration-dependent reactive incorporation growth process and experimentally confirmed via measurements of the dynamics of reflection high-energy electron diffraction during homoepitaxy of GaAs (100). Implications for growth conditions desirable for realizing high quality interfaces and high luminescence efficiency in systems such as GaAs/A1(x)Gz(1-x)As are discussed.

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