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首页> 美国卫生研究院文献>Scientific Reports >Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration
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Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

机译：GaAs上的低温等离子体增强了CVD的硅外延生长：III-V / Si集成的新范例

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摘要

The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.
机译：III-V半导体与硅的集成是光子学，微电子学和光伏技术的关键问题。采用标准方法，即在硅上外延生长III-V，需要厚而复杂的缓冲层来限制由界面极性问题，热膨胀和晶格失配引起的晶体缺陷。为了克服这些问题，我们开发了一种反向创新的方法来结合III-V和硅：在低温下通过等离子增强CVD（PECVD）在GaAs上直接外延生长硅。实际上，我们证明了通过SiF4等离子体清洁GaAs表面以及随后从SiH4 / H2前驱体进行外延生长都可以在175°C下实现。用原位光谱椭圆偏振法监测GaAs原生氧化物蚀刻，拉曼光谱用于评估外延硅质量。我们发现在沉积过程中氢气中的SiH4稀释控制了层结构：外延生长发生在微晶和非晶生长机制之间过渡处的沉积条件。 SIMS和STEM-HAADF为界面化学清晰度提供了证据。 TEM和XRD分析共同表明，PECVD可以在GaAs上生长高质量的弛豫单晶硅。

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